LMH6553 Datasheet, PDF (6/24 Pages) National Semiconductor (TI) – 900 MHz Fully Differential Amplifier With Output Limiting Clamp

Symbol
Parameter
Input Bias Current
Voltage Range
CMRR
Input Resistance
Gain
Miscellaneous Performance
Z_T
PSRR
Open Loop Transimpedance
Power Supply Rejection Ratio
I_S
Supply Current
Conditions
V_CM = 0, (Note 9)
Measure V_OD, V_ID = 0V
ΔV_O,CM/ΔV_CM
Differential
DC, ΔV_S = ±1V
R_L = ∞
Min
Typ
Max
(Note 8) (Note 7) (Note 8)
−3.5
±0.75 ±0.81
84
200
0.995 1.00 1.008
Units
µA
V
dB
kΩ
V/V
105
dBΩ
85
dB
23
26.5
30
34
mA
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics tables.
Note 2: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that T_J = T_A. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where
T_J > T_A. See Applications Section for information on temperature de-rating of this device." Min/Max ratings are based on product characterization and simulation.
Individual parameters are tested as noted.
Note 3: The maximum power dissipation is a function of T_J(MAX), θ_JA. The maximum allowable power dissipation at any ambient temperature is
P_D = (T_J(MAX)– T_A) / θ_JA. All numbers apply for packages soldered directly onto a PC Board.
Note 4: The maximum output current (I_OUT) is determined by device power dissipation limitations. See the Power Dissipation section of the Application Section
for more details.
Note 5: Human Body Model, applicable std. MIL-STD-883, Method 30157. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC). Field-
Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
Note 6: Short circuit current should be limited in duration to no more than 10 seconds. See the Power Dissipation section of the Application Information for more
details.
Note 7: Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will
also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 8: Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality
Control (SQC) methods.
Note 9: Negative current implies current flowing out of the device.
Note 10: I_BI is referred to a differential output offset voltage by the following relationship: V_OD(offset) = I_BI*2R_F
Note 11: Exceeding limits could result in excessive device current.
Note 12: Linearity Guardband is defined for an output sinusoid (f = 75 MHz, V_OD = 2 V_PP). It is the difference between the V_CLAMP level and the peak output voltage
where the SFDR is decreased by 3 dB.
Note 13: Clamp Overshoot Width is the duration of overshoot in a 100% overdrive condition.
Note 14: This parameter is guaranteed by design and/or characterization and is not tested in production. The condition of V_CLAMP = 3V is not intended for continuous
operation; continuous operation with V_CLAMP = 3V may incur permanent damage to the device.
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