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LM48100Q Datasheet, PDF (6/24 Pages) National Semiconductor (TI) – Mono, 1.3W Audio Power Amplifier with Output Fault Detection and Volume Control
Symbol
RFAULT
RFAULT
ROPEN
RSHT
ISHTCKT
TSD
tDIAG
LM48100Q
Parameter
Conditions
Typical Room Extended
(Note 7) Temp Temp
Limits Limits
(Note 8) (Notes 8, 9)
Output to Supply Short
Circuit Detection Threshold
Short between either OUTA to VDD or
GND, or OUTB to VDD or GND
Short Circuit
Open Circuit
3
3
7.5
7.5
Short between both OUTA and OUTB to
Output to Supply Short
VDD or GND
Circuit Detection Threshold Short Circuit
6
Open Circuit
15
Open Circuit Detection
Threshold
Open circuit between OUTA and OUTB
100
200
Output to Output Short
Circuit Detection Threshold
Short circuit between OUTA and OUTB
2
6
Short Circuit Current Limit
1.47 1.67
2
Thermal Shutdown
Threshold
170
Diagnostic Time
58
Units
(Limits)
kΩ (min)
kΩ (max)
kΩ (min)
kΩ (max)
Ω (min)
Ω (max)
Ω (min)
Ω (max)
A (max)
°C
ms
Audio Amplifier Electrical Characteristics VDD = 3.6V (Notes 1, 2)
The following specifications apply for Programmable Gain = 0dB, RL = 8Ω, f = 1kHz, unless otherwise specified. Limits apply for
TA = 25°C.
LM48100Q
Symbol
Parameter
Conditions
Typical
(Note 7)
Room
Temp
Limits
(Note 8)
Extended
Temp
Limits
(Notes 8, 9)
Units
(Limits)
IDD
Quiescent Power Supply
Current
VIN = 0V, Both channels active
RL = 8Ω
RL = ∞
IDD
Diagnostic Mode Quiescent Diagnostic Mode Enabled
Power Supply Current
3.8
8.5
3.6
5
11.7 14.5
10.8
mA (max)
7
mA (max)
mA (max)
ISD
Shutdown Current
Shutdown Enabled
VOS
Differential Output Offset
Voltage
VIN = 0V, RL = 8Ω
0.01
1
8.8
50
µA (max)
76
mV (max)
TWU
Wake-Up Time
AV
Gain
Time from shutdown to audio available 11.5
50
Minimum Gain Setting
–54
±1
Maximum Gain Setting
18
±1
ms (max)
dB (max)
dB (min)
dB (max)
dB (min)
Mute
Mute Attenuation
–79
–77
dB (max)
RIN
Input Resistance
AV = 18dB
AV = –54dB
11.5
12.5
13.5
110
98
120
kΩ (min)
kΩ (max)
89
kΩ (min)
135
kΩ (max)
PO
Output Power
RL = 8Ω, f = 1kHz
THD+N = 10%
THD+N = 1%
820
660
480
mW
mW (min)
Total Harmonic Distortion +
THD+N
Noise
PO = 400mW, f = 1kHz, RL = 8Ω
0.04
% (max)
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