LMX2531LQ1500E_08 Datasheet, PDF (5/24 Pages) National Semiconductor (TI) – High Performance Frequency Synthesizer System with Integrated VCO

Electrical Characteristics (V_CC = 3.0 V, -40°C ≤ T_A ≤ 85 °C; f_Fout = 1500 MHz, except as specified.)
Symbol
Parameter
Conditions
Min Typ Max
Current Consumption
I_CC
Power Supply Current
Divider Disabled
Divider Enabled
34 41
37 46
I_CCPD
Power Down Current
CE = 0 V, Part Initialized
7
Oscillator
I_IHOSC
I_ILOSC
f_OSCin
v_OSCin
Oscillator Input High Current
Oscillator Input Low Current
Frequency Range
Oscillator Sensitivity
V_IH = 2.75 V
V_IL = 0
PLL
100
-100
5
80
0.5
2.0
f_COMP
Phase Detector Frequency
ICP = 0
32
90
I_CPout
Charge Pump
Output Current Magnitude
ICP = 1
ICP = 3
180
360
ICP = 15
1440
I_CPoutTRI
I_CPoutMM
I_CPoutV
I_CPoutT
CP TRI-STATE Current
Charge Pump
Sink vs. Source Mismatch
Charge Pump
Current vs. CP Voltage Variation
CP Current vs. Temperature
Variation
0.4 V < V_CPout < 2.0 V
V_CPout = 1.2 V
T_A = 25°C
0.4 V < V_CPout < 2.0 V
T_A = 25°C
V_CPout = 1.2 V
2 10
2
8
4
8
LN(f)
Normalized Phase Noise
Contribution
(Note 2)
ICP = 1X Charge Pump Gain
4 kHz Offset
ICP = 16X Charge Pump Gain
4 kHz Offset
-202
-212
Units
mA
µA
µA
µA
MHz
Vpp
MHz
µA
µA
µA
µA
nA
%
%
%
dBc/Hz
5
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