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LMX2315 Datasheet, PDF (5/22 Pages) National Semiconductor (TI) – Frequency Synthesizer for RF Personal Communications
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Electrical CharacteristicsLMX2325 and LMX2320 VCC e VP e 3 0V LMX2315 VCC e VP e 5 0V b40 C k
TA k 85 C except as specified (Continued)
Symbol
Parameter
Conditions
Min
Typ Max Units
IDo-source
IDo-sink
IDo-source
IDo-sink
IDo-Tri
Charge Pump Output Current
Charge Pump Output Current
Charge Pump TRI-STATE Current
VCC e VP e 3 0V VDo e VP 2
VCC e VP e 3 0V VDo e VP 2
VCC e VP e 5 0V VDo e VP 2
VCC e VP e 5 0V VDo e VP 2
0 5V s VDo s VP b 0 5V
T e 85 C
b2 5
b2 5
mA
25
mA
b5 0
mA
50
mA
25
nA
IDo vs VDo
Charge Pump Output Current
Magnitude Variation vs Voltage
(Note 1)
0 5V s VDo s VP b 0 5V
T e 25 C
15
%
IDo-sink vs
IDo-source
Charge Pump Output Current
Sink vs Source Mismatch
(Note 2)
VDo e VP 2
T e 25 C
10
%
IDovs T
Charge Pump Output Current
Magnitude Variation vs Temperature
(Note 3)
b40 C k T k 85 C
VDo e VP 2
10
%
VOH
High-Level Output Voltage
IOH e b1 0 mA
VOL
Low-Level Output Voltage
IOL e 1 0 mA
VOH
High-Level Output Voltage (OSCOUT) IOH e b200 mA
VOL
Low-Level Output Voltage (OSCOUT) IOL e 200 mA
IOL
Open Drain Output Current (wp)
VCC e 5 0V VOL e 0 4V
IOH
Open Drain Output Current (wp)
VOH e 5 5V
RON
Analog Switch ON Resistance (2315)
tCS
Data to Clock Set Up Time
See Data Input Timing
tCH
Data to Clock Hold Time
See Data Input Timing
tCWH
Clock Pulse Width High
See Data Input Timing
tCWL
Clock Pulse Width Low
See Data Input Timing
tES
Clock to Enable Set Up Time
See Data Input Timing
tEW
Enable Pulse Width
See Data Input Timing
Except OSCOUT
Notes 1 2 3 See related equations in Charge Pump Current Specification Definitions
VCC b 0 8
V
04
V
VCC b 0 8
V
04
V
10
mA
100 mA
100
X
50
ns
10
ns
50
ns
50
ns
50
ns
50
ns
5
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