English
Language : 

LMX2314 Datasheet, PDF (5/20 Pages) National Semiconductor (TI) – 1.2 GHz Frequency Synthesizer for RF Personal Communications
Electrical Characteristics VCC e 5 0V VP e 5 0V b40 C k TA k 85 C except as specified (Continued)
Symbol
Parameter
Conditions
Min
Typ Max Units
IDo-source
IDo-sink
IDo-Tri
Charge Pump Output Current
Charge Pump TRI-STATE Current
VDo e VP 2
VDo e VP 2
0 5V s VDo s VP b 0 5V
T e 85 C
b2 5
b5 0
mA
50
mA
25
nA
IDo vs VDo
Charge Pump Output Current
Magnitude Variation vs Voltage
(Note 1)
0 5V s VDo s VP b 0 5V
T e 25 C
15
%
IDo-sink vs
IDo-source
Charge Pump Output Current
Sink vs Source Mismatch
(Note 2)
VDo e VP 2
T e 25 C
10
%
IDovs T
Charge Pump Output Current
Magnitude Variation vs Temperature
(Note 3)
b40 C k T k 85 C
VDo e VP 2
10
%
VOH
VOL
VOH
VOL
IOL
IOH
RON
tCS
tCH
tCWH
tCWL
tES
tEW
High-Level Output Voltage
Low-Level Output Voltage
High-Level Output Voltage (OSCOUT)
Low-Level Output Voltage (OSCOUT)
Open Drain Output Current (wp)
IOH e b1 0 mA
IOL e 1 0 mA
IOH e b200 mA
IOL e 200 mA
VCC e 5 0V VOL e 0 4V
VCC b 0 8
VCC b 0 8
10
V
04
V
V
04
V
mA
Open Drain Output Current (wp)
VOH e 5 5V
100
mA
Analog Switch ON Resistance (2315)
100
X
Data to Clock Set Up Time
See Data Input Timing
50
ns
Data to Clock Hold Time
See Data Input Timing
10
ns
Clock Pulse Width High
See Data Input Timing
50
ns
Clock Pulse Width Low
See Data Input Timing
50
ns
Clock to Enable Set Up Time
See Data Input Timing
50
ns
Enable Pulse Width
See Data Input Timing
50
ns
Except OSCOUT
Notes 1 2 3 See related equations in Charge Pump Current Specification Definitions
5