THS4082 Datasheet, PDF (4/32 Pages) National Semiconductor (TI) – 175 MHz High Speed AMPLIFIERS

THS4081, THS4082
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175ĆMHz LOWĆPOWER HIGHĆSPEED AMPLIFIERS
SLOS274D − DECEMBER 1999 − REVISED JUNE 2001
electrical characteristics at T_A = 25°C, V_CC = ±15 V, R_L = 150 Ω (unless otherwise noted)
dynamic performance
PARAMETER
TEST CONDITIONS
VCC = ± 15 V
Small-signal bandwidth (−3 dB)
VCC = ± 5 V
VCC = ± 15 V
BW
Bandwidth for 0.1 dB flatness
VCC = ± 5 V
VCC = ± 15 V
VCC = ± 5 V
Full power bandwidth†
VO(pp) = 20 V,
VO(pp) = 5 V,
SR ^{Slew rate‡}
VCC = ± 15 V,
VCC = ± 5 V,
Settling time to 0.1%
ts
Settling time to 0.01%
VCC = ± 15 V,
VCC = ± 5 V,
VCC = ± 15 V,
VCC = ± 5 V,
† _{Slew rate is measured from an output level range of 25% to 75%.}
‡ _{Full power bandwidth = slew rate/2π VO(Peak).}
VCC = ± 15 V
VCC = ± 5 V
20-V step,
5-V step
5-V step
2-V step
5-V step
2-V step
noise/distortion performance
Gain = 1
Gain = −1
Gain = 1
Gain = 5
Gain = 1
Gain = −1
Gain = −1
MIN TYP MAX UNIT
175
MHz
160
70
MHz
65
35
MHz
35
2.7
MHz
7.1
230
V/µs
170
43
ns
30
233
ns
280
PARAMETER
THD Total harmonic distortion
Vn
Input voltage noise
In
Input current noise
Differential gain error
Differential phase error
XT
Channel-to-channel crosstalk
(THS4082 only)
TEST CONDITIONS
VO(pp) = 2 V,
f = 1 MHz, Gain = 2
VCC = ± 15 V
VCC = ± 5 V
VCC = ± 5 V or ± 15 V, f = 10 kHz
VCC = ± 5 V or ± 15 V, f = 10 kHz
RL = 150 Ω
RL = 1 kΩ
RL = 150 Ω
RL = 1 kΩ
Gain = 2,
40 IRE modulation,
Gain = 2,
40 IRE modulation,
NTSC,
± 100 IRE ramp
NTSC,
± 100 IRE ramp
VCC = ± 15 V
VCC = ± 5 V
VCC = ± 15 V
VCC = ± 5 V
VCC = ± 5 V or ± 15 V, f = 1 MHz
MIN TYP
−64
−79
−64
−77
10
0.7
0.01%
0.01%
0.05°
0.05°
MAX UNIT
dBc
nV/√Hz
pA/√Hz
−75
dB
4
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