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LP2954 Datasheet, PDF (4/13 Pages) National Semiconductor (TI) – 5V and Adjustable Micropower Low-Dropout Voltage Regulators | |||
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Electrical Characteristics (Continued)
Limits in standard typeface are for TJ = 25ËC, bold typeface applies over the â40ËC to +125ËC temperature range. Limits
are guaranteed by production testing or correlation techniques using standard Statistical Quality Control (SQC) methods. Un-
less otherwise noted: VIN = 6V, IL = 1 mA, CL = 2.2 µF.
Symbol
Parameter
Conditions
Typical
2954AI
2954I
Units
Min
Max
Min
Max
Additional Specifications for the Adjustable Device (LP2954AIM and LP2954IM)
VREF Reference Voltage
(Note 10)
1.230
1.215
1.245
1.205
1.255
V
1.205
1.255
1.190
1.270
âVREF/ Reference Voltage
VIN=2.5V to
0.03
0.1
0.2
VREF Line Regulation
VO(NOM)+1V
VIN=2.5V to
VO(NOM)+1V to 30V
0.2
0.4
(Note 11)
âVREF/âT Reference Voltage
(Note 3)
20
Temperature
Coefficient
ppm/ËC
IB(FB)
Feedback Pin Bias
Current
20
40
40
nA
60
60
IGND
Ground Pin Current VSHUTDOWNâ¤1.1V
105
140
140
µA
at Shutdown (Note
6)
IO(SINK) Output â³OFFâ³
Pulldown Current
(Note 12)
30
30
mA
20
20
Dropout Detection Comparator
IOH
Output â³HIGHâ³
VOH=30V
0.01
1
Leakage Current
2
1
µA
2
VOL
Output â³LOWâ³
VIN=VO(NOM)â0.5V
150
250
250
mV
Voltage
IO(COMP)=400µA
400
400
VTHR(MAX) Upper Threshold
Voltage
(Note 13)
â60
â80
â35
â80
â35
mV
â95
â25
â95
â25
VTHR(MIN) Lower Threshold
Voltage
(Note 13)
â85
â110
â55
â110
â55
mV
â160
â40
â160
â40
HYST Hysteresis
(Note 13)
15
mV
Shutdown Input
VOS
Input Offset Voltage (Referred to VREF)
±3
â7.5
7.5
â7.5
7.5
mV
â10
10
â10
10
HYST Hysteresis
6
mV
IB
Input Bias Current
VIN(S/D)=0V to 5V
10
â30
30
â30
30
nA
â50
50
â50
50
Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the de-
vice outside of its rated operating conditions.
Note 2: The maximum allowable power dissipation is a function of the maximum junction temperature, TJ (MAX), the junction-to-ambient thermal resistance, θJ-A,
and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using:
.
Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown. The junction-to-ambient
thermal resistance of the TO-220 (without heatsink) is 60ËC/W, 73ËC/W for the TO-263, and 160ËC/W for the SO-8. If the TO-263 package is used, the thermal re-
sistance can be reduced by increasing the P.C. board copper area thermally connected to the package: Using 0.5 square inches of copper area, θJA is 50ËC/W; with
1 square inch of copper area, θJA is 37ËC/W; and with 1.6 or more square inches of copper area, θJA is 32ËC/W. The junction-to-case thermal resistance is 3ËC/W.
If an external heatsink is used, the effective junction-to-ambient thermal resistance is the sum of the junction-to-case resistance (3ËC/W), the specified thermal re-
sistance of the heatsink selected, and the thermal resistance of the interface between the heatsink and the LP2954. Some typical values are listed for interface ma-
terials used with TO-220:
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