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| LMX2324A Datasheet, PDF (4/12 Pages) National Semiconductor (TI) – PLLatinum™ 2.2 GHz Frequency Synthesizer for RF Personal Communications (SL163188) | |||
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Note 3: Except fIN and OSCin
Note 4: See related equations in charge pump current specification definitions
Charge Pump Current Specification Definitions
10124604
I1 = CP sink current at VCPo = VP â ÎV
I2 = CP sink current at VCPo = VP/2
I3 = CP sink current at VCPo = ÎV
I4 = CP source current at VCPo = VP â ÎV
I5 = CP source current at VCPo = VP/2
I6 = CP source current at VCPo = ÎV
ÎV = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to VP and ground. Typical values are between 0.5V and 1.0V.
1. ICPo vs. VCPo = Charge Pump Output Current magnitude variation vs. Voltage =
[½ * {|I1| â |I3|}]/[½ * {|I1| + |I3|}] * 100% and [½ * {|I4| â |I6|}]/[½ * {|I4| + |I6|}] * 100%
2. ICPo-sink vs. ICPo-source = Charge Pump Output Current Sink vs. Source Mismatch =
[|I2| â |I5|]/[½ * {|I2| + |I5|}] * 100%
3. ICPo vs. T = Charge Pump Output Current magnitude variation vs. Temperature =
[|I2 @ temp| â |I2 @ 25°C|]/|I2 @ 25°C| * 100% and [|I5 @ temp| â |I5 @ 25°C|]/|I5 @ 25°C| * 100%
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