LMV793 Datasheet, PDF (4/22 Pages) National Semiconductor (TI) – 88 MHz, Low Noise, 1.8V CMOS Input, Decompensated Operational Amplifiers

I_OUT
Output Short Circuit Current Sourcing to V^−
V_IN = 200 mV (Note 10)
Sinking to V⁺
V_IN = –200 mV (Note 10)
I_S
Supply Current per Amplifier LMV793
LMV794 per Channel
SR
GBWP
e_n
i_n
THD+N
Slew Rate
Gain Bandwidth Product
Input-Referred Voltage Noise
Input-Referred Current Noise
Total Harmonic Distortion +
Noise
A_V = +10, Rising (10% to 90%)
A_V = +10, Falling (90% to 10%)
A_V = +10, R_L = 10 kΩ
f = 1 kHz
f = 1 kHz
f = 1 kHz, A_V = 1, R_L = 600Ω
45
60
37
mA
10
21
6
1.15
1.40
1.75
mA
1.30
1.70
2.05
35
28
V/μs
88
MHz
5.8
nV/
0.01
pA/
0.01
%
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics
Tables.
Note 2: Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC)
Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
Note 3: The maximum power dissipation is a function of T_J(MAX), θ_JA. The maximum allowable power dissipation at any ambient temperature is
P_D = (T_J(MAX) - T_A)/θ_JA. All numbers apply for packages soldered directly onto a PC Board.
Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that T_J = T_A. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T_J >
T_A.
Note 5: Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will
also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 6: Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the statistical quality
control (SQC) method.
Note 7: Offset voltage average drift is determined by dividing the change in V_OS by temperature change.
Note 8: Positive current corresponds to current flowing into the device.
Note 9: Input bias current and input offset current are guaranteed by design
Note 10: The short circuit test is a momentary test, the short circuit duration is 1.5 ms.
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