LM5008_09 Datasheet, PDF (4/16 Pages) National Semiconductor (TI) – High Voltage (100V) Step Down Switching Regulator

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V_IN to GND
BST to GND
SW to GND (Steady State)
ESD Rating (Note 5)
Human Body Model
BST to V_CC
-0.3V to 100V
-0.3V to 114V
-1V
2kV
100V
BST to SW
V_CC to GND
All Other Inputs to GND
Lead Temperature (Soldering 4 sec)
Storage Temperature Range
14V
14V
-0.3 to 7V
260°C
-55°C to +150°C
Operating Ratings (Note 1)
V_IN
Operating Junction Temperature
9.5V to 95V
−40°C to + 125°C
Electrical Characteristics
Specifications with standard typeface are for T_J = 25°C, and those with boldface type apply over full Operating Junction Tem-
perature range. V_IN = 48V, unless otherwise stated (Note 3).
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V_CC Supply
V_CC Reg
V_CC Regulator Output
6.6
7
7.4
V
V_CC Current Limit
(Note 4)
9.5
mA
V_CC undervoltage Lockout
Voltage (V_CC increasing)
6.3
V
V_CC Undervoltage Hysteresis
200
mV
V_CC UVLO Delay (filter)
100mV overdrive
10
µs
I_IN Operating Current
Non-Switching, FB = 3V
485
675
µA
I_IN Shutdown Current
R_ON/SD = 0V
76
150
µA
Switch Characteristics
Buck Switch Rds(on)
I_TEST = 200mA, (Note 6)
1.15
2.47
Ω
Gate Drive UVLO
V_BST − V_SW Rising
3.4
4.5
5.5
V
Gate Drive UVLO Hysteresis
430
mV
Current Limit
Current Limit Threshold
0.41
0.51
0.61
A
Current Limit Response Time
I_switch Overdrive = 0.1A Time
400
ns
to Switch Off
OFF time generator (test 1)
FB=0V, R_CL = 100K
35
µs
OFF time generator (test 2)
FB=2.3V, R_CL = 100K
2.56
µs
On Time Generator
T_ON - 1
Vin = 10V
Ron = 200K
2.15
2.77
3.5
µs
T_ON - 2
Vin = 95V
Ron = 200K
200
300
420
ns
Remote Shutdown Threshold Rising
0.40
0.70
1.05
V
Remote Shutdown Hysteresis
35
mV
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