LP38852 Datasheet, PDF (3/18 Pages) National Semiconductor (TI) – 1.5A Fast-Response High-Accuracy Adjustable LDO Linear Regulator with Enable and Soft-Start

Absolute Maximum Ratings (Note 1)
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I_OUT Current (Survival)
Junction Temperature
Internally Limited
−40°C to +150°C
Operating Ratings (Note 1)
Storage Temperature Range
Lead Temperature
Soldering, 5 seconds
ESD Rating
Human Body Model (Note 2)
Power Dissipation (Note 3)
V_IN Supply Voltage (Survival)
V_BIAS Supply Voltage (Survival)
V_SS SoftStart Voltage (Survival)
V_OUT Voltage (Survival)
−65°C to +150°C
260°C
±2 kV
Internally Limited
−0.3V to +6.0V
−0.3V to +6.0V
−0.3V to +6.0V
−0.3V to +6.0V
V_IN Supply Voltage
V_BIAS Supply Voltage (Note 7)
0.8V ≤ V_OUT ≤ 1.2V
1.2V < V_OUT ≤ 1.8V
V_EN Voltage
I_OUT
Junction Temperature Range
(Note 3)
 
(V_OUT + V_DO) to V_BIAS
 
3.0V to 5.5V
4.5V to 5.5V
0.0V to V_BIAS
0 mA to 1.5A
−40°C to +125°C
Electrical Characteristics Unless otherwise specified: V_OUT = 0.80V, V_IN = V_OUT(NOM) + 1V, V_BIAS = 3.0V, V_EN =
V_BIAS, I_OUT = 10 mA, C_IN = C_OUT = 10 µF, C_BIAS = 1 µF, C_SS = open. Limits in standard type are for T_J = 25°C only; limits in boldface
type apply over the junction temperature (T_J) range of -40°C to +125°C. Minimum and Maximum limits are guaranteed through
test, design, or statistical correlation. Typical values represent the most likely parametric norm at T_J = 25°C, and are provided for
reference purposes only.
Symbol
Parameter
Conditions
MIN
TYP
MAX Units
V_ADJ
V_ADJ Accuracy
V_OUT(NOM)+1V ≤ V_IN ≤ V_BIAS ≤ 4.5V,
See (Note 7)
3.0V ≤ V_BIAS ≤ 5.5V,
492.5
485.
500.
507.5
515.
10 mA ≤ I_OUT ≤ 1.5A
V_OUT(NOM)+1V ≤ V_IN ≤ V_BIAS ≤ 4.5V,
mV
See (Note 7)
3.0V ≤ V_BIAS ≤ 5.5V,
10 mA ≤ I_OUT ≤ 1.5A,
0°C ≤ T_J ≤ +125°C
490.
500.
510.
V_OUT
V_OUT Range
3.0V ≤ V_BIAS ≤ 5.5V
4.5V ≤ V_BIAS ≤ 5.5V
0.80
1.20
V
0.80
1.80
ΔV_OUT/ΔV_IN Line Regulation, V_IN (Note 4)
V_OUT(NOM)+1V ≤ V_IN ≤ V_BIAS ≤ 4.5V
-
0.04
-
%/V
ΔV_OUT/ΔV_BIAS Line Regulation, V_BIAS (Note 4)
Output Voltage Load Regulation
ΔV_OUT/ΔI_{OUT (Note 5)}
3.0V ≤ V_BIAS ≤ 5.5V
10 mA ≤ I_OUT ≤ 1.5A
-
0.10
-
%/V
-
0.2
-
%/A
V_DO
Dropout Voltage (Note 6)
I_OUT = 1.5A
-
130
165
180
mV
I_GND(IN)
Quiescent Current Drawn from
V_IN Supply
V_OUT = 0.80V
V_BIAS = 3.0V
10 mA ≤ I_OUT ≤ 1.5A
V_EN ≤ 0.5V
-
7.0
8.5
9.0
mA
1
100
300
μA
I_GND(BIAS)
Quiescent Current Drawn from
V_BIAS Supply
10 mA ≤ I_OUT ≤ 1.5A
V_EN ≤ 0.5V
-
3.0
3.8
4.5
mA
100
170
200
μA
UVLO
Under-Voltage Lock-Out
Threshold
V_BIAS rising until device is functional
2.20
2.00
2.45
2.70
2.90
V
UVLO_(HYS)
Under-Voltage Lock-Out
Hysteresis
V_BIAS falling from UVLO threshold until 60
150
300
mV
device is non-functional
50
350
I_SC
Output Short-Circuit Current
V_IN = V_OUT(NOM) + 1V,
V_BIAS = 3.0V, V_OUT = 0.0V
-
4.5
-
A
3
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