LMH6533 Datasheet, PDF (3/11 Pages) National Semiconductor (TI) – Four - Channel Laser Diode Driver with Dual Output, LVDS Interface and HFM Oscillator

+5V DC Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for T_J = 25˚C, R_L = 10Ω. Boldface limits apply at the temperature extremes.
(Note 8)
Symbol
Parameter
Conditions
Min
Typ
Max
(Note 7) (Note 6) (Note 7) Units
I_Swr
Supply Current, Write Mode
EN2 = EN3 = EN4 = High; (Note 12)
I2 = I3 = I4 = I_R = 125 µA
I_S
Supply Current
All Channels Disable, No Input
Current. SELB = 0; R_AA, R_AB, R_FA,
R_FB = ∞
182.5
210
mA
45
mA
+5V AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T_J = 25˚C, R_L = 10Ω. Boldface limits apply at the temperature extremes.
(Note 8)
Symbol
Parameter
Conditions
Min
Typ
Max
(Note 7) (Note 6) (Note 7)
Units
t_r
Write Rise Time
t_f
Write Fall Time
t_r
Write Rise Time
t_f
Write Fall Time
t_r
Write Rise Time
t_f
Write Fall Time
OS
Output Current Overshoot
IN₀
Output Current Noise
I_OUT = 40 mA (Read) + 40 mA (10%
to 90%) R_LOAD = 5Ω
I_OUT = 40 mA (Read) + 40 mA (90%
to 10%) R_LOAD = 5Ω
I_OUT = 100 mA (Read) + 100 mA
(10% to 90%) R_LOAD = 5Ω
I_OUT = 100 mA (Read) + 100 mA
(90% to 10%) R_LOAD = 5Ω
I_OUT = 150 mA (Read) + 150 mA
(10% to 90%) R_LOAD = 5Ω
I_OUT = 150 mA (Read) + 150 mA
(90% to 10%) R_LOAD = 5Ω
I_OUT = 40 mA (Read) + 40 mA
I_OUT = 40 mA; R_LOAD = 50Ω;
f = 10 MHz; ENOSC = Low
0.50
ns
0.76
ns
0.65
ns
0.75
ns
0.78
ns
0.77
ns
16
%
0.47
nA/
t_ON
t_OFF
t_disr
t_enr
t_dis
t_en
BW_C
f_OSC
I_OUT ON Prop. Delay
I_OUT OFF Prop. Delay
Disable Time, Read Channel
Enable Time, Read Channel
Disable Time, (Shutdown)
Enable Time, (Shutdown)
Channel Bandwidth, –3 dB
Oscillator Frequency
Switched on EN2 and EN2B
Switched on EN2 and EN2B
Switch on ENR
Switch on ENR
I_OUT = 50 mA, All Channels
R_F = 3 kΩ
Range 200 MHz to 600 MHz
0.45
ns
0.40
ns
1.1
ns
1.1
ns
3
µs
3
µs
2.5
MHz
270
330
390
MHz
T_DO
Disable Time Oscillator
T_EO
Enable Time Oscillator
5.2
ns
5.4
ns
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: For testing purposes, ESD was applied using ‘Human body model’; 1.5 kΩ in series with 100 pF
Note 3: Machine Model, 0Ω in series with 200 pF.
Note 4: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the
maximum allowed junction temperature of 150˚C
Note 5: The maximum power dissipation is a function of T_J(MAX, θ_JA, and T_A. The maximum allowable power dissipation at any ambient temperature is PD =
(T_J(MAX) -T_A) /θ_JA. All numbers apply for packages soldered directly onto a PC board.
Note 6: Typical values represent the most likely parametric norm.
Note 7: All limits are guaranteed by testing or statistical analysis.
Note 8: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that T_J = T_A. There is no guarantee of parametric performance as indicated in the electrical tables under conditions of internal self-heating where
T_J > T_A. See Applications section for information on temperature de-rating of this device.
Note 9: V_GPD = ground potential difference voltage between driver and receiver
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