LME49722 Datasheet, PDF (3/14 Pages) National Semiconductor (TI) – Low Noise, High Performance, High Fidelity Dual Audio Operational Amplifier

Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V_S = V_CC-V_EE)
Storage Temperature
38V
−65°C to 150°C
Input Voltage
(V-) - 0.7V to (V+) + 0.7V
Output Short Circuit (Note 3)
Continuous
ESD Susceptibility (Note 4)
2000V
ESD Susceptibility (Note 5)
200V
Junction Temperature (T_JMAX)
Thermal Resistance
 θ_JA
 θ_JC
Operating Ratings
Temperature Range
T_MIN ≤ T_A ≤ T_MAX
Supply Voltage Range
150°C
154°C/W
27°C/W
−40°C ≤ T_A ≤ 85°C
±2.5V ≤ V_S ≤ ±18V
Electrical Characteristics for the LME49722 (Notes 1, 2) The following specifications apply for
V_S = ±15V and ±18V, R_L = 2kΩ, f_IN = 1kHz unless otherwise specified. Limits apply for T_A = 25°C,
Symbol
Parameter
Conditions
LME49722
Typical
Limit
(Note 6)
(Note 7)
Units
(Limits)
THD+N
IMD
Total Harmonic Distortion + Noise
Intermodulation Distortion
A_V = 1, V_OUT = 3V_rms
R_L = 2kΩ
R_L = 600Ω
A_V = 1, V_OUT = 3V_RMS
Two-tone, 60Hz & 7kHz 4:1
0.00002
0.00002
0.00002
0.00009
%
% (max)
%
GBWP
SR
FPBW
Gain Bandwidth Product
Slew Rate
Full Power Bandwidth
f_IN = 100kHz
A_V = 1, V_OUT = 10V_P-P
V_OUT = 1V_P-P, –3dB
referenced to output magnitude
at f = 1kHz
55
45
MHz (min)
±22
±15
V/μs (min)
12
MHz
t_s
Settling time
A_V = –1, 10V step, C_L = 100pF
1.2
0.1% error range
μs
e_INV
Equivalent Input Voltage Noise
f_BW = 20Hz to 20kHz
f= 1kHz
V_S = ±15V
e_N
Equivalent Input Voltage Density
V_S = ±18V
f = 10Hz
V_S = ±15V
V_S = ±18V
I_n
Current Noise Density
f = 1kHz
f = 10Hz
0.25
0.35
μV_RMS (max)
1.9
nV√Hz
1.9
2.5
nV√Hz (max)
2.8
nV√Hz
3.2
nV√Hz
2.6
 pA/√Hz
6
 pA/√Hz
V_OS
PSRR
Offset Voltage
Power Supply Rejection Ratio
ISO_CH-CH Channel-to-Channel Isolation
I_B
Input Bias Current
V_CM = 0V
ΔV_S = 20V (Note 8)
f_IN = 1kHz
f_IN = 20kHz
V_CM = 0V
V_S = ±15V
V_S = ±18V
±0.02
120
136
135
50
53
±0.7
110
200
mV (max)
dB (min)
dB
dB
nA
nA (max)
ΔI_OS/
ΔTemp
Input Bias Current Drift vs
Temperature
–40°C ≤ T_A ≤ 85°C
0.1
nA/°C
I_OS
Input Offset Current
V_CM = 0V
V_S = ±15V
V_S = ±18V
25
nA
32
100
nA (max)
3
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