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LM3620 Datasheet, PDF (3/6 Pages) National Semiconductor (TI) – Lithium-Ion Battery Charger Controller
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Input Voltage (VDRIVE)
VEXT
Junction Temperature
Storage Temperature
Lead Temp. Soldering
Vapor Phase (60 sec.)
Infrared (15 sec.)
35V
1.5V
150˚C
−65 to +150˚C
215˚C
220˚C
Power Dissipation (TA = 25˚C)
(Note 2)
ESD Susceptibility (Note 3)
Operating Ratings (Note 1)
Ambient Temp. Range
Junction Temp. Range
Thermal Resistance (Junction to
Ambient, θJ-A)
Input Voltage (VDRIVE)
300mW
2000V
0˚C to 70˚C
0˚C to 125˚C
280˚C/W
4V to 30V
Electrical Characteristics
LM3620-4
VDRIVE = 5V, IDRIVE = 2mA.
limits with standard typeface
Limits
apply
with boldface
for TA = 25˚C.
type
apply
over
the
full
operating
ambient
temperature
range,
0˚C
to
+70˚C,
Symbol
Parameter
Conditions
Typical
Limit
Units
VREG
Regulated Output Voltage (pin
1 to ground)
Pin 5 shorted to pin 1 (graphite
anode)
4.1
4.051/4.018
V(min)
4.149/4.182
V(max)
Pin 5 open (coke anode)
4.2
4.150/4.116
V(min)
VREG/VDRIVE
IQ
IOFF
IDRIVE
Gm(DRIVE)
Regulated Output Voltage
Tolerance
Supply Sensitivity
Quiescent Current
Off State Current
Drive Pin Sink Current
Drive Pin Transconductance
IEXT
Gm(EXT)
External Pin Source Current
External Pin Transconductance
RIN
VREG Input Resistance
RF
Feedback Resistance
Either Pin 5 setting
VREG for 5V ≤ VDRIVE ≤ 30V
VREG = 4.5V, VEXT = 1.0V (Note 4)
VDRIVE open circuited (Note 5)
VDRIVE = 5.0V
∆IDRIVE/∆VREG
2mA ≤ IDRIVE ≤15mA
VEXT = 1V (Note 6)
∆IEXT/∆VREG, VEXT = 1V
0mA ≤ IEXT ≤ 2.5mA
Pin 1 to Ground.
Circuit biased with VDRIVE applied
VDRIVE open circuited
Pin 1 to Pin 5
4.250/4.284
±1.2/±2.0
V(max)
%
100
µV/V(max)
400
750
µA(max)
10
200
nA(max)
20
15
mA(min)
3
A/V
3
2.5
mA(min)
0.8
A/V
46
kΩ
42
MΩ
1500
Ω
3
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