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LM1558 Datasheet, PDF (3/6 Pages) National Semiconductor (TI) – Dual Operational Amplifier | |||
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 5)
Supply Voltage
LM1558
LM1458
Power Dissipation (Note 2)
LM1558H/LM1458H
LM1458N
Differential Input Voltage
Input Voltage (Note 3)
Output Short-Circuit Duration
±22V
±18V
500 mW
400 mW
±30V
±15V
Continuous
Operating Temperature Range
LM1558
LM1458
â55ËC to +125ËC
0ËC to +70ËC
Storage Temperature Range
â65ËC to +150ËC
Lead Temperature (Soldering, 10 sec.)
260ËC
Soldering Information
Dual-In-Line Package
Soldering (10 seconds)
260ËC
Small Outline Package
Vapor Phase (60 seconds)
215ËC
Infrared (15 seconds)
220ËC
See AN-450 âSurface Mounting Methods and Their Effect
on Product Reliabilityâ for other methods of soldering
surface mount devices.
ESD tolerance (Note 6)
300V
Electrical Characteristics (Note 4)
Parameter
Input Offset Voltage
Input Offset Current
Input Bias Current
Input Resistance
Supply Current Both
Amplifiers
Large Signal Voltage Gain
Input Offset Voltage
Input Offset Current
Input Bias Current
Large Signal Voltage Gain
Output Voltage Swing
Input Voltage Range
Common Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Conditions
TA = 25ËC, RS ⤠10 kâ¦
TA = 25ËC
TA = 25ËC
TA = 25ËC
TA = 25ËC, VS = ±15V
LM1558
Min Typ Max
1.0
5.0
80
200
200
500
0.3
1.0
3.0
5.0
TA = 25ËC, VS = ±15V
VOUT = ±10V, RL ⥠2 kâ¦
RS ⤠10 kâ¦
50
160
6.0
500
1.5
VS = ±15V, VOUT = ±10V
25
RL ⥠kâ¦
VS = ±15V, RL = 10 kâ¦
±12 ±14
RL = 2 kâ¦
±10 ±13
VS = ±15V
±12
RS ⤠10 kâ¦
70
90
RS ⤠10 kâ¦
77
96
LM1458
Min Typ Max
1.0
6.0
80
200
200
500
0.3
1.0
3.0
5.6
20
160
7.5
300
0.8
15
±12 ±14
±10 ±13
±12
70
90
77
96
Units
mV
nA
nA
Mâ¦
mA
V/mV
mV
nA
µA
V/mV
V
V
V
dB
dB
Note 1: âAbsolute Maximum Ratingsâ indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: The maximum junction temperature of the LM1558 is 150ËC, while that of the LM1458 is 100ËC. For operating at elevated temperatures, devices in the H08
package must be derated based on a thermal resistance of 150ËC/W, junction to ambient or 20ËC/W, junction to case. For the DIP the device must be derated based
on a thermal resistance of 187ËC/W, junction to ambient.
Note 3: For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage.
Note 4: These specifications apply for VS = ±15V and â55ËC ⤠TA ⤠125ËC, unless otherwise specified. With the LM1458, however, all specifications are limited to
0ËC ⤠TA ⤠70ËC and VS = ±15V.
Note 5: Refer to RETS 1558V for LM1558J and LM1558H military specifications.
Note 6: Human body model, 1.5 k⦠in series with 100 pF.
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