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DS91M047 Datasheet, PDF (3/12 Pages) National Semiconductor (TI) – 125 MHz Quad M-LVDS Line Driver
Absolute Maximum Ratings (Note 4)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
−0.3V to +4V
LVCMOS Input Voltage
M-LVDS Output Voltage
−0.3V to (VDD + 0.3V)
−1.9V to +5.5V
M-LVDS Output Short Circuit
Current Duration
Continuous
Junction Temperature
+140°C
Storage Temperature Range
−65°C to +150°C
Lead Temperature Range
Soldering (4 sec.)
+260°C
Maximum Package Power Dissipation @ +25°C
MA Package
2.21W
Derate MA Package
19.2 mW/°C above +25°C
Package Thermal Resistance (4-Layer, 2 oz. Cu, JEDEC)
 θJA
 θJC
+52°C/W
+19°C/W
ESD Susceptibility
HBM
MM
CDM
≥8 kV
≥250V
≥1250V
Note 1: Human Body Model, applicable std. JESD22-A114C
Note 2: Machine Model, applicable std. JESD22-A115-A
Note 3: Field Induced Charge Device Model, applicable std.
JESD22-C101-C
Recommended
OperatingConditions
Min Typ Max Units
Supply Voltage (VDD)
+3.0 +3.3 +3.6 V
Voltage at Any Bus Terminal −1.4
+3.8 V
 (Separate or Common-Mode)
High Level Input Voltage (VIH) 2.0
Low Level Input Voltage (VIL)
0
Operating Free Air
VDD V
0.8 V
Temperature (TA)
−40 +25 +85 °C
DC Electrical Characteristics (Note 5, Note 6, Note 7, Note 9)
Over supply voltage and operating temperature ranges, unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ Max Units
LVCMOS DC Specifications
VIH
High-Level Input Voltage
VIL
Low-Level Input Voltage
IIH
High-Level Input Current
IIL
Low-Level Input Current
VCL
Input Clamp Voltage
M-LVDS DC Specifications
VIH = 3.6V
VIL = 0V
IIN = -18 mA
2.0
GND
VDD
V
0.8
V
-15
±1
15
μA
-15
±1
15
μA
-1.5
V
|VAB|
ΔVAB
Differential Output Voltage Magnitude
Change in Differential Output Voltage Magnitude
RL = 50Ω, CL = 5 pF
Figures 1, 3
480
−50
Between Logic States
650 mV
50
mV
VOS(SS)
|ΔVOS(SS)|
Steady-State Common-Mode Output Voltage
Change in Steady-State Common-Mode Output
Voltage Between Logic States
Figures 1, 2
RL = 50Ω
0.30 1.6 2.10
V
0
50
mV
VA(OC)
VB(OC)
VP(H)
VP(L)
Maximum Steady-State Open-Circuit Output Voltage
Maximum Steady-State Open-Circuit Output Voltage
Voltage Overshoot, Low-to-High Level Output
(Note 10)
Voltage Overshoot, High-to-Low Level Output
(Note 10)
Figure 4
RL = 50Ω, CL = 5 pF
CD = 0.5 pF, Figures 6, 7
0
0
−0.2VSS
2.4
V
2.4
V
1.2VSS
V
V
IOS
Output Short-Circuit Current (Note 8)
Figure 5
-43
VA = 3.8V, VB = 1.2V
0
IA
Driver High-Impedance Output Current
VA = 0V or 2.4V, VB = 1.2V −20
VA = −1.4V, VB = 1.2V
−32
VA = 3.8V, VB = 1.2V
0
IB
Driver High-Impedance Output Current
VA = 0V or 2.4V, VB = 1.2V −20
VA = −1.4V, VB = 1.2V
−32
IAB
Driver High-Impedance Output Differential Curent
(IA − IB)
VA = VB, −1.4V ≤ V ≤ 3.8V
−4
43
mA
32
μA
20
μA
0
μA
32
μA
20
μA
0
μA
4
μA
3
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