100324 Datasheet, PDF (3/6 Pages) National Semiconductor (TI) – Low Power Hex TTL-to-ECL Translator

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Above which the useful life may be impaired.
Storage Temperature (T_STG)
Maximum Junction Temperature (T_J)
Ceramic
−65˚C to +150˚C
+175˚C
V_EE Pin Potential to Ground Pin
V_TTL Pin Potential to Ground Pin
Input Voltage (DC)
−7.0V to +0.5V
−0.5V to +6.0V
−0.5V to +6.0V
Output Current (DC Output HIGH)
−50 mA
ESD (Note 2)
≥2000V
Recommended Operating
Conditions
Case Temperature (T_C)
Military
−55˚C to +125˚C
Supply Voltage (V_EE)
−5.7V to −4.2V
Note 1: Absolute maximum ratings are those values beyond which the de-
vice may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.
Military Version
DC Electrical Characteristics
V_EE = −4.2V to −5.7V, V_CC = V_CCA = GND, T_C = −55˚C to +125˚C, V_TTL = +4.5V to +5.5V
Symbol
Parameter
Min
Max
Units
TC
Conditions
VOH
Output HIGH Voltage
−1025 −870
mV
−1085 −870
mV
0˚C to +125˚C
−55˚C
VIN = VIH (Max)
or VIL (Min)
Loading with
50Ω to −2.0V
Notes
(Notes 3, 4, 5)
VOL
VOHC
Output LOW Voltage
Output HIGH Voltage
−1830 −1620
mV
−1830 −1555
mV
−1035
mV
−1085
mV
0˚C to +125˚C
−55˚C
0˚C to +125˚C
−55˚C
VIN = VIH (Max)
or VIL (Min)
Loading with
50Ω to −2.0V
(Notes 3, 4, 5)
VOLC
Output LOW Voltage
−1610
mV
−1555
mV
0˚C to +125˚C
−55˚C
VIH
VIL
IIH
IIL
VFCD
IEE
ITTL
Input HIGH Voltage
Input LOW Voltage
Input HIGH Current
Breakdown Test
Input LOW Current
Data
Enable
Input Clamp Diode Voltage
VEE Power Supply Current
VTTL Power Supply Current
2.0
5.0
V
0.0
0.8
V
20
µA
100
µA
−0.9
mA
−5.4
−1.2
V
−70
−22
mA
38
mA
−55˚C to +125˚C
−55˚C to +125˚C
−55˚C to +125˚C
−55˚C to +125˚C
−55˚C to +125˚C
−55˚C to +125˚C
−55˚C to +125˚C
−55˚C to +125˚C
Over VTTL, VEE, TC Range
Over VTTL, VEE, TC Range
VIN = +2.7V
VIN = +7.0V
VIN = +0.4V
IIN = −18 mA
All Inputs VIN = +4.0V
All Inputs VIN = GND
(Notes 3, 4, 5, 6)
(Notes 3, 4, 5, 6)
(Notes 3, 4, 5)
(Notes 3, 4, 5)
(Notes 3, 4, 5)
(Notes 3, 4, 5)
(Notes 3, 4, 5)
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.
Note 6: Guaranteed by applying specified input condition and testing V_OH/V_OL.
AC Electrical Characteristics
V_EE = −4.2V to −5.7V, V_CC = V_CCA = GND, V_TTL = +4.5V to +5.5V
Symbol
Parameter
TC = −55˚C
TC = +25˚C
TC = +125˚C
Units
Min
Max
Min
Max
Min
Max
Conditions
Notes
tPLH
tPHL
tTLH
tTHL
Propagation Delay
Data and Enable to Output
Transition Time
20% to 80%, 80% to 20%
0.50
3.00
0.50
2.90
0.30
3.30
ns
0.35
1.80
0.45
1.80
0.45
1.80
ns
Figures 1, 2
(Notes 7, 8, 9)
(Note 10)
Note 7: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures.
Note 8: Screen tested 100% on each device at +25˚C temperature only, Subgroup A9.
Note 9: Sample tested (Method 5005, Table I) on each manufactured lot at +25˚C, Subgroup A9, and at +125˚C and −55˚C temperatures, Subgroups A10 and A11.
Note 10: Not tested at +25˚C, +125˚C, and −55˚C temperature (design characterization data).
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