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LMH2100 Datasheet, PDF (24/32 Pages) National Semiconductor (TI) – 50 MHz to 4 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA
rather impractical. However, since the drift error is usually
small VOUT(T) is only slightly different from VOUT(TO). This
means that we can apply the following approximation:
This expression is easily simplified by taking the following
considerations into account:
• The drift error at the calibration temperature E(TO,TO)
equals zero (by definition).
• The estimator transfer FDET(VOUT,TO) is not a function of
temperature; the estimator output changes over
temperature only due to the temperature dependence of
VOUT.
• The actual detector input power PIN is not temperature
dependent (in the context of this expression).
• The derivative of the estimator transfer function to VOUT
equals approximately 1/KSLOPE in the LOG-linear region of
the detector transfer function (the region of interest).
Using this, we arrive at:
ence with the LOG-conformance error is observed at the top
and bottom end of the detection range; instead of a rapid in-
crease the drift error settles to a small value at high and low
input power levels due to the fact that the detector saturation
levels are relatively temperature independent.
In a practical application it may not be possible to use the
exact inverse detector transfer function as the algorithm for
the estimator. For example it may require too much memory
and/or too much factory calibration time. However, using the
ideal LOG-linear model in combination with a few extra data
points at the top and bottom end of the detection range -
where the deviation is largest - can already significantly re-
duce the power measurement error.
2.4 Temperature Compensation
A further reduction of the power measurement error is possi-
ble if the operating temperature is measured in the applica-
tion. For this purpose, the detector model used by the
estimator should be extended to cover the temperature de-
pendency of the detector.
Since the detector transfer function is generally a smooth
function of temperature (the output voltage changes gradually
over temperature), the temperature is in most cases ade-
quately modeled by a first-order or second-order polynomial,
i.e.
This expression is very similar to the expression of the LOG-
conformance error determined previously. The only differ-
ence is that instead of the output of the ideal LOG-linear
model, the actual detector output voltage at the calibration
temperature is now subtracted from the detector output volt-
age at the operating temperature.
Figure 7 depicts an example of the drift error.
30014022
FIGURE 7. Temperature Drift Error of the LMH2100
at f = 1855 MHz
In agreement with the definition, the temperature drift error is
zero at the calibration temperature. Further, the main differ-
The required temperature dependence of the estimator, to
compensate for the detector temperature dependence can be
approximated similarly:
The last approximation results from the fact that a first-order
temperature compensation is usually sufficiently accurate.
The remainder of this section will therefore concentrate on
first-order compensation. For second and higher-order com-
pensation a similar approach can be followed.
Ideally, the temperature drift could be completely eliminated
if the measurement system is calibrated at various tempera-
tures and input power levels to determine the Temperature
Sensitivity S1. In a practical application, however that is usu-
ally not possible due to the associated high costs. The alter-
native is to use the average temperature drift in the estimator,
instead of the temperature sensitivity of each device individ-
ually. In this way it becomes possible to eliminate the sys-
tematic (reproducible) component of the temperature drift
without the need for calibration at different temperatures dur-
ing manufacturing. What remains is the random temperature
drift, which differs from device to device. Figure 8 illustrates
the idea. The graph at the left schematically represents the
behavior of the drift error versus temperature at a certain input
power level for a large number of devices.
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