TL082 Datasheet, PDF (2/12 Pages) National Semiconductor (TI) – Wide Bandwidth Dual JFET Input Operational Amplifier

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
Power Dissipation
Operating Temperature Range
T_j(MAX)
Differential Input Voltage
±18V
(Note 2)
0˚C to +70˚C
150˚C
±30V
Input Voltage Range (Note 3)
±15V
Output Short Circuit Duration
Continuous
Storage Temperature Range
−65˚C to +150˚C
Lead Temp. (Soldering, 10 seconds)
260˚C
ESD rating to be determined.
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage
to the device may occur. Operating Ratings indicate conditions for which the
device is functional, but do not guarantee specific performance limits.
DC Electrical Characteristics (Note 5)
Symbol
Parameter
Conditions
V_OS
∆V_OS/∆T
I_OS
I_B
R_IN
A_VOL
Input Offset Voltage
Average TC of Input Offset
Voltage
Input Offset Current
Input Bias Current
Input Resistance
Large Signal Voltage Gain
V_O
V_CM
CMRR
PSRR
I_S
Output Voltage Swing
Input Common-Mode Voltage
Range
Common-Mode Rejection Ratio
Supply Voltage Rejection Ratio
Supply Current
R_S = 10 kΩ, T_A = 25˚C
Over Temperature
R_S = 10 kΩ
T_j = 25˚C, (Notes 5, 6)
T_j ≤ 70˚C
T_j = 25˚C, (Notes 5, 6)
T_j ≤ 70˚C
T_j = 25˚C
V_S = ±15V, T_A = 25˚C
V_O = ±10V, R_L = 2 kΩ
Over Temperature
V_S = ±15V, R_L = 10 kΩ
V_S = ±15V
R_S ≤ 10 kΩ
(Note 7)
TL082C
Min
Typ
Max
5
15
20
10
25
200
4
50
400
8
10¹²
25
100
15
±12
±13.5
±11
+15
−12
70
100
70
100
3.6
5.6
Units
mV
mV
µV/˚C
pA
nA
pA
nA
Ω
V/mV
V/mV
V
V
V
dB
dB
mA
AC Electrical Characteristics (Note 5)
Symbol
Parameter
Conditions
TL082C
Units
Min
Typ
Max
Amplifier to Amplifier Coupling
T_A = 25˚C, f = 1Hz-
20 kHz (Input Referred)
−120
dB
SR
GBW
e_n
Slew Rate
Gain Bandwidth Product
Equivalent Input Noise Voltage
V_S = ±15V, T_A = 25˚C
V_S = ±15V, T_A = 25˚C
T_A = 25˚C, R_S = 100Ω,
f = 1000 Hz
8
13
4
25
V/µs
MHz
nV/√Hz
i_n
Equivalent Input Noise Current
T_j = 25˚C, f = 1000 Hz
0.01
pA/√Hz
Note 2: For operating at elevated temperature, the device must be derated based on a thermal resistance of 115˚C/W junction to ambient for the N package.
Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4: The power dissipation limit, however, cannot be exceeded.
Note 5: These specifications apply for V_S = ±15V and 0˚C ≤T_A ≤ +70˚C. V_OS, I_B and I_OS are measured at V_CM = 0.
Note 6: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T_j. Due to the limited
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, P_D. T_j = T_A + θ_jA P_D where θ_jA is the thermal resistance from junction to ambient. Use of a heat sink is recom-
mended if input bias current is to be kept to a minimum.
Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice.
V_S = ±6V to ±15V.
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