LMH6609 Datasheet, PDF (2/15 Pages) National Semiconductor (TI) – 900MHz Voltage Feedback Op Amp

Absolute Maximum Ratings (Note 1)
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V_S (V⁺ - V^−)
I_OUT
Common Mode Input Voltage
±6.6V
(Note 3)
V+ to V−
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature Range
ESD Tolerance (Note 4)
Human Body Model
+150˚C
−65˚C to +150˚C
+300˚C
2000V
Machine Model
200V
Operating Ratings (Note 3)
Thermal Resistance
Package
8-Pin SOIC
5-Pin SOT23
Operating Temperature
Nominal Supply Voltage
(Note 6)
(θ_JC)
65˚C/W
120˚C/W
−40˚C
±3.3V
(θ_JA)
145˚C/W
187˚C/W
+85˚C
±6V
±5V Electrical Characteristics
Unless specified, A_V = +2, R_F = 250Ω: V_S = ±5V, R_L = 100Ω; unless otherwise specified. Boldface limits apply over tempera-
ture Range. (Note 2)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Frequency Domain Response
SSBW −3dB Bandwidth
LSBW
−3dB Bandwidth
SSBWG1 −3dB Bandwidth A_V = 1
GFP
.1dB Bandwidth
DG
Differential Gain
DP
Differential Phase
Time Domain Response
V_OUT = 0.5V_PP
V_OUT = 4.0V_PP
V_OUT = 0.25V_PP
Gain is Flat to .1dB
R_L = 150Ω, 4.43MHz
R_L = 150Ω, 4.43MHz
260
150
170
900
130
0.01
0.026
MHz
MHz
MHz
MHz
%
deg
TRS
Rise and Fall Time
1V Step
1.6
ns
TRL
4V Step
2.6
ns
t_s
Settling Time to 0.05%
SR
Slew Rate
2V Step
4V Step (Note 5)
1200
15
1400
ns
V/µs
Distortion and Noise Response
HD2
2^nd Harmonic Distortion
HD3
3^rd Harmonic Distortion
Equivalent Input Noise
VN
Voltage Noise
CN
Current Noise
2V_PP, 20MHz
2V_PP, 20MHz
>1MHz
>1MHz
−63
dBc
−57
dBc
3.1
nV/
1.6
pA/
Static, DC Performance
V_IO
Input Offset Voltage
I_BN
Input Bias Current
I_BI
Input Offset Current
±0.8
±2.5
mV
±3.5
−2
±5
µA
±8
.1
±1.5
µA
±3
PSRR
Power Supply Rejection Ratio
DC, 1V Step
67
73
dB
65
CMRR
I_CC
Common Mode Rejection Ratio
Supply Current
DC, 2V Step
R_L = ∞
67
73
dB
65
7.0
7.8
mA
8.5
Miscellaneous Performance
R_IN
C_IN
R_OUT
Input Resistance
Input Capacitance
Output Resistance
Closed Loop
1
MΩ
1.2
pF
0.3
Ω
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