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LMC6009 Datasheet, PDF (2/7 Pages) National Semiconductor (TI) – 9 Channel Buffer Amplifier for TFT-LCD
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance
Input Voltage
Supply Voltage (VDD)
Operating Temperature
Storage Temperature Range
1.0 kV
GND–0.3V ≤ V+ ≤
VDD+0.3VDC
−0.3 to +6.5 VDC
−20˚C to +75˚C
−55˚C to +150˚C
Maximum Junction Temperature (TJ)
Maximum Power Dissipation (PD)
+150˚C
1.09W
Operating Ratings (Note 1)
Supply Voltage
Frequency
Thermal Resistance (θJA)
Derating
2.7V ≤ VDD ≤ 5.5V
DC-50 kHz
8.70 mW/˚C
3V DC Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for TJ = 25˚C, and VDD = 3.0 VDC.
Symbol
Parameter
Conditions
Min
Typ
VDD
Supply Voltage
VOS
Offset Voltage
IB
Input Bias Current
VOL
Output Voltage, Low
VOH
Output Voltage, High
ISC
Output Short Circuit Current
IDD
Supply Current
∆VL
Load Regulation
VIH
A/B Switch Logic Voltage, High
VIL
A/B Switch Logic Voltage, Low
IIH
A/B Switch Logic Current, High
IIL
A/B Switch Logic Current, Low
AV
Voltage Gain
RS = 10k
Amp A8 and A9
ISINK = 13 mA
Amp A1–A7
ISINK = 13 mA
Amp A1 and A2
ISOURCE = 13 mA
Amp A3–A9
ISOURCE = 13 mA
VOUT - 1.65V (Note 1)
No Load
VIN = 0.3–3 VDC
ISOURCE = 13 mA
ISINK = 13 mA
Select A
Select B
2.7
3.0
VDD–0.2
VDD–0.6
80
150
3.5
2
0.985
Note 1: See Test Circuit (Figure 2 )
Max
3.3
20
1500
GND +
0.2
GND +
0.6
Units
V
mV
nA
V
V
V
V
mA
5
mA
−10
mV
+10
mV
V
0.8
V
1.5
µA
1
µA
V/V
5V DC Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for TJ = 25˚C, and VDD = 5 VDC.
Symbol
Parameter
Conditions
Min
Typ
VDD
Supply Voltage
VOS
Offset Voltage
IB
Input Bias Current
VOL
Output Voltage, Low
VOH
Output Voltage, High
ISC
Output Short Circuit Current
IDD
Supply Current
RS = 10k
Amp A8 and A9
ISINK = 20 mA
Amp A1–A7
ISINK = 20 mA
Amp A1 and A2
ISOURCE = 20 mA
Amp A3–A9
ISOURCE = 20 mA
VOUT - 1.65V (Note 1)
No Load
4.5
5
VDD–0.2
VDD–1.0
120
200
4.5
Max
5.5
20
1500
GND +
0.2
GND +
1.0
Units
V
mV
nA
V
V
V
V
mA
6
mA
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