DS90LV027A Datasheet, PDF (2/8 Pages) National Semiconductor (TI) – LVDS Dual High Speed Differential Driver

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V_CC)
Input Voltage (DI)
−0.3V to +4V
−0.3V to +3.6V
Output Voltage (DO±)
−0.3V to +3.9V
Maximum Package Power Dissipation @ +25˚C
M Package
1190 mW
Derate M Package
9.5 mW/˚C above +25˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature Range Soldering
(4 sec.)
+260˚C
ESD Ratings
(HBM 1.5 kΩ, 100 pF)
(EIAJ 0 Ω, 200 pF)
(CDM)
(IEC direct 330 Ω, 150 pF)
≥ 8kV
≥ 1000V
≥ 1000V
≥ 4kV
Recommended Operating
Conditions
Supply Voltage (V_CC)
Temperature (T_A)
Min Typ Max
3.0 3.3 3.6
−40 25 +85
Units
V
˚C
Electrical Characteristics
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (Notes 2, 3, 7)
Symbol
Parameter
Conditions
Pin Min Typ
DIFFERENTIAL DRIVER CHARACTERISTICS
V_OD
∆V_OD
V_OH
V_OL
V_OS
∆V_OS
I_OXD
I_OSD
V_IH
V_IL
I_IH
I_IL
V_CL
I_CC
Output Differential Voltage
V_OD Magnitude Change
Output High Voltage
Output Low Voltage
Offset Voltage
Offset Magnitude Change
Power-off Leakage
Output Short Circuit Current
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
Input Clamp Voltage
Power Supply Current
R_L = 100Ω
(Figure 1)
V_OUT = V_CC or GND, V_CC = 0V
V_IN = 3.3V or 2.4V
V_IN = GND or 0.5V
I_CL = −18 mA
No Load
V_IN = V_CC or GND
R_L = 100Ω
DO+, 250 360
DO−
1
1.4
0.9
1.1
1.125 1.2
0
3
±1
−5.7
DI
2.0
GND
±2
±1
−1.5 −0.6
V_CC
8
14
Max Units
450 mV
35
mV
1.6
V
V
1.375 V
25
mV
±10 µA
−8
mA
V_CC
V
0.8
V
±10 µA
±10 µA
V
14
mA
20
mA
Switching Characteristics
Over Supply Voltage and Operating Temperature Ranges, unless otherwise specified. (Notes 3, 4, 5, 6)
Symbol
Parameter
Conditions
Min Typ
DIFFERENTIAL DRIVER CHARACTERISTICS
t_PHLD
t_PLHD
t_SKD1
t_SKD2
t_SKD3
t_SKD4
t_TLH
t_THL
f_MAX
Differential Propagation Delay High to Low
Differential Propagation Delay Low to High
Differential Pulse Skew |t_PHLD − t_PLHD| (Note 8)
Channel to Channel Skew (Note 9)
Differential Part to Part Skew (Note 10)
Differential Part to Part Skew (Note 11)
Transition Low to High Time
Transition High to Low Time
Maximum Operating Frequency (Note 12)
R_L = 100Ω, C_L = 15 pF
(Figure 2 and Figure 3)
0.3
0.8
0.3
1.1
0
0.3
0
0.4
0
0
0.2
0.5
0.2
0.5
350
Max Units
1.5
ns
1.5
ns
0.7
ns
0.8
ns
1.0
ns
1.2
ns
1.0
ns
1.0
ns
MHz
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except V_OD.
Note 3: All typicals are given for: V_CC = +3.3V and T_A = +25˚C.
Note 4: These parameters are guaranteed by design. The limits are based on statistical analysis of the device over PVT (process, voltage, temperature) ranges.
Note 5: C_L includes probe and fixture capacitance.
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