DS8863 Datasheet, PDF (2/4 Pages) National Semiconductor (TI) – MOS-to-LED 8-Digit Driver

Absolute Maximum Ratings
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Input Voltage Range
(Note 1)
Collector (Output) Voltage
(Note 2)
DS8863
DS8963
b5V to V_SS b5V to V_SS
10V
18V
Collector (Output)-to-Input
Voltage
10V
18V
Emitter-to-Ground Voltage
(V_I ^t 5V)
Emitter-to-Input Voltage
Voltage at V_SS Terminal With
Respect to Any Other
Device Terminal
10V
18V
Collector (Output) Current
Each Collector (Output)
All Collectors (Output)
DS8863
500 mA
600 mA
DS8963
500 mA
600 mA
Continuous Total
Dissipation
800 mW
800 mW
Operating Temperature
Range
0 C to a70 C 0 C to a70 C
Storage Temperature
Range
b65 C to a150 C
Maximum Power Dissipation
at 25 C
Molded Package
1563 mW
1563 mW
Lead Temperature
(Soldering 4 sec )
260 C
260 C
Derate molded package 12 5 mW C above 25 C
Electrical Characteristics V_SS e 10V T_A e 0 C to a70 C unless otherwise noted
Symbol
Parameter
Conditions
Min Typ Max Units
V_OL
Low Level Output Voltage
V_IN e 7V I_OUT e 500 mA
T_A e 25 C
15
V
16
V
I_OH
High Level Output Current
I_I
Input Current at Maximum Input Voltage
I_SS
Current into V_SS Terminal
18V for the DS8963
V_OH e 10V I_IN e 40 mA
V_IN e 0 5V
V_IN e 10V I_OL e 20 mA
250 mA
250 mA
2
mA
1
mA
Switching Characteristics V_SS e 7 5V T_A e 25 C
Symbol
Parameter
Conditions
t_PLH
t_PHL
Propagation Delay Time Low-to-High Level Output
Propagation Delay Time High-to-Low Level Output
V_IH e 8V R_L e 20X
C_L e 15 pF
Note 1 The input is the only device terminal which may be negative with respect to ground
Note 2 Voltage values are with respect to network ground terminal unless otherwise noted
Min Typ Max Units
300
ns
30
ns
2