CLC453 Datasheet, PDF (2/12 Pages) National Semiconductor (TI) – Comlinear CLC453 Single Supply, Low-Power, High Output, Programmable Buffer

+5V Electrical Characteristics ^(Av ^{= +2, R}L ^{= 100Ω, V}s ^{= +5V1, V}cm ^{= V}EE ^{+ (V}s^{/2), R}L ^{tied to V}cm^{, unless specified)}
PARAMETERS
Ambient Temperature
CONDITIONS
CLC453AJ
TYP
+25°C
MIN/MAX RATINGS
UNITS NOTES
+25°C 0 to 70°C -40 to 85°C
FREQUENCY DOMAIN RESPONSE
-3dB bandwidth
-0.1dB bandwidth
gain peaking
gain rolloff
linear phase deviation
V_o = 0.5V_pp
V_o = 2.0V_pp
V_o = 0.5V_pp
<200MHz, V_o = 0.5V_pp
<30MHz, V_o = 0.5V_pp
<30MHz, V_o = 0.5V_pp
TIME DOMAIN RESPONSE
rise and fall time
settling time to 0.05%
overshoot
slew rate
2V step
1V step
2V step
2V step
DISTORTION AND NOISE RESPONSE
2^nd harmonic distortion
3^rd harmonic distortion
equivalent input noise
2V_pp, 1MHz
2V_pp, 1MHz; R_L = 1kΩ
2V_pp, 5MHz
2V_pp, 1MHz
2V_pp, 1MHz; R_L = 1kΩ
2V_pp, 5MHz
voltage (e_ni)
non-inverting current (i_bn)
inverting current (i_bi)
>1MHz
>1MHz
>1MHz
STATIC DC PERFORMANCE
input offset voltage
average drift
input bias current (non-inverting)
average drift
gain accuracy
internal resistors (R_f, R_g)
power supply rejection ratio
common-mode rejection ratio
supply current
DC
DC
R_L= ∞
MISCELLANEOUS PERFORMANCE
input resistance (non-inverting)
input capacitance (non-inverting)
input voltage range, High
input voltage range, Low
output voltage range, High
output voltage range, Low
output voltage range, High
output voltage range, Low
output current
R_L = 100Ω
R_L = 100Ω
R_L = ∞
R_L = ∞
output resistance, closed loop DC
110
90
25
0
0.2
0.1
4.8
25
9
370
-72
-65
-65
-74
-84
-60
2.8
7.5
10.5
13
80
5
30
±0.3
1000
48
51
3.0
0.39
1.5
4.2
0.8
4.0
1.0
4.1
0.9
100
400
85
75
22
0.5
0.4
2
6.4
–
13
280
-66
-59
-56
-70
-76
-55
3.5
10
14
30
–
18
–
±1.5
±20%
45
48
3.4
0.28
2.3
4.1
0.9
3.9
1.1
4.0
1.0
80
600
75
72
22
0.9
0.6
3
6.8
–
16
250
-64
-57
-54
-68
-74
-53
3.8
11
15
35
–
22
–
±2.0
±26%
43
46
3.6
0.25
2.3
4.0
1.0
3.8
1.2
4.0
1.0
65
600
70
MHz
B
70
MHz
18
MHz
1.0
dB
B
0.6
dB
B
3
deg
7.3
ns
–
ns
16
%
240
V/µs
-64
dBc
-57
dBc
-54
dBc
B
-68
dBc
-74
dBc
-53
dBc
B
3.8
nV/√Hz
11
pA/√Hz
15
pA/√Hz
35
mV
A
–
µV/˚C
24
µA
A
–
nA/˚C
±2.0
%
A
±30%
Ω
43
dB
B
46
dB
3.6
mA
A
0.25
MΩ
2.3
pF
4.0
V
1.0
V
3.8
V
1.2
V
3.9
V
1.1
V
40
mA
C
600
mΩ
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.
Notes
Absolute Maximum Ratings
A) J-level: spec is 100% tested at +25°C, sample tested at +85°C.
B) J-level: spec is sample tested at +25°C.
C) The short circuit current can exceed the maximum safe
output current.
1) V_s = V_CC - V_EE
Reliability Information
Transistor Count
MTBF (based on limited test data)
49
31Mhr
supply voltage (V_CC - V_EE)
output current (see note C)
common-mode input voltage
maximum junction temperature
storage temperature range
lead temperature (soldering 10 sec)
ESD rating (human body model)
+14V
140mA
V_EE to V_CC
+175°C
-65°C to +150°C
+300°C
500V
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