MNCLC505A-X Datasheet, PDF (12/16 Pages) National Semiconductor (TI) – HIGH-SPEED, PROGRAMMABLE-SUPPLY CURRENT, MONOLITHIC OP AMP

MNCLC505A-X REV 0A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vs = +5V dc, Rl is load resistance, Rp is programming resistance, feedback resistance (Rf) = 1000 Ohms,
peak capacitance (Cp) = 100 pF, and Av = +6. -55 C < Ta < +125 C (Note 3)
SYMBOL
Tf
PARAMETER
Rise and Fall
Time
CONDITIONS
Icc = 9mA, 2V step, Rp = 33kOhms, Rl =
250Ohms
NOTES
1
1
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
3.0
ns 9, 11
3.5
ns 10
Icc = 3.4mA, 2V step, Rp = 100kOhms,
1
Rl = 500Ohms
1
4.4
ns 9, 11
5.4
ns 10
Icc = 1mA, 2V step, Rp = 300kOhms, Rl 1
= 1kOhms
1
10
ns 9
12
ns 10, 11
Tr
Rise and Fall
Icc = 9mA, 5V step, Rp = 33kOhms, Rl = 1
Time
250Ohms
1
3.7
ns 9, 11
4.4
ns 10
Icc = 3.4mA, 5V step, Rp = 100kOhms,
1
Rl = 500Ohms
1
7.0
ns 9, 11
8.8
ns 10
Icc = 1mA, 5V step, Rp = 300kOhms, Rl 1
= 1kOhms
1
18
ns 9
20
ns 10, 11
OS
Overshoot
Icc = 9mA, 2V step, Rp = 33kOhms, Rl = 1
250Ohms
1
12
%
9
15
%
10, 11
Icc = 3.4mA, 2V step, Rp = 100kOhms,
1
Rl = 500Ohms
1
10
%
9
12
%
10, 11
Icc = 1mA, 2V step, Rp = 300kOhms, Rl 1
= 1kOhms
1
5
%
9
8
%
10, 11
Note 1:
Note 2:
Note 3:
Note 4:
If not tested, shall be guaranteed to the limits specified in table I herein.
Group A testing only.
The algebraic convention, whereby the most negative value is a minimum and the most
positive is a maximum, is used in this table. Negative current shall be defined as
conventional current flow out of a device terminal.
Noise tests are performed from 1MHz to 200MHz for Icc = 9mA, 1MHz to 200MHz for Icc =
3.4mA, and 1MHz to 100MHz for Icc = 1mA.
12