NM93CS06L Datasheet, PDF (1/14 Pages) National Semiconductor (TI) – 256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) and Data Protect (MICROWIRE-TM Bus Interface)

August 1996
NM93CS06L CS46L CS56L CS66L
256- 1024- 2048- 4096-Bit Serial EEPROM
with Extended Voltage (2 7V to 5 5V) and Data Protect
(MICROWIRE^TM Bus Interface)
General Description
The NM93CS06L CS46L CS56L CS66L devices are
256 1024 2048 4096 bits respectively of non-volatile
electrically erasable memory divided into 16 64 128 256 x
16-bit registers (addresses) The NM93CSxxL Family func-
tions in an extended voltage operating range and is fabri-
cated using National Semiconductor’s floating gate CMOS
technology for high reliability high endurance and low pow-
er consumption N registers (N ^s 16 N ^s 64 N ^s 128 N ^s
256) can be protected against data modification by pro-
gramming the Protect Register with the address of the first
register to be protected against data modification (All regis-
ters greater than or equal to the selected address are then
protected from further change ) Additionally this address
can be ‘‘locked’’ into the device making all future attempts
to change data impossible
These devices are available in both SO and TSSOP pack-
ages for small space considerations
The serial interface that controls these EEPROMs is
MICROWIRE compatible providing simple interfacing to
standard microcontrollers and microprocessors There
are a total of 10 instructions 5 which operate on the EEPROM
memory and 5 which operate on the Protect Register The
memory instructions are READ WRITE WRITE ALL
WRITE ENABLE and WRITE DISABLE The Protect regis-
ter instructions are PRREAD PRWRITE PRCLEAR
PRDISABLE and PRENABLE
Features
Y _{Sequential register read}
Y _{Write protection in a user defined section of memory}
Y _{2 7V to 5 5V operating range in all modes}
Y _{Typical active current of 200 mA typical standby}
current of 1 mA
Y _{No erase required before write}
Y _{Reliable CMOS floating gate technology}
Y _{MICROWIRE compatible serial I O}
Y _{Self timed write cycle}
Y _{Device status during programming mode}
Y _{40 year data retention}
Y _{Endurance 10}6 _{data changes}
Y _{Packages Available 8-pin SO 8-pin DIP and 8-pin}
TSSOP
Block Diagram
TRI-STATE is a registered trademark of National Semiconductor Corporation
MICROWIRETM is a trademark of National Semiconductor Corporation
C1996 National Semiconductor Corporation TL D 10044
TL D 10044 – 1
RRD-B30M126 Printed in U S A
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