NM93C13 Datasheet, PDF (1/8 Pages) National Semiconductor (TI) – 256-/1024-Bit Serial EEPROM

September 1994
NM93C13 C14
256- 1024-Bit Serial EEPROM
General Description
The NM93C13 C14 is 256 1024 respectively bits of
CMOS electrically erasable memory divided into 16 64 16-
bit registers They are fabricated using National Semicon-
ductor’s floating-gate CMOS process for high speed high
reliability and low power The NM93C13 C14 is available in
an 8-pin SO package to save board space
The serial interface of the NM93C13 C14 is MICROWIRE^TM
compatible for simple interface to standard microcontrollers
and microprocessors There are 7 instructions Read
Erase Write Enable Erase Erase All Write Write All and
Erase Write Disable
All programming cycles are completely self-timed for simpli-
fied operation The ready busy status is available on the DO
pin to indicate the completion of a programming cycle
Features
Y _{Typical active current 400 mA Typical standby current}
25 mA
Y _{Reliable CMOS floating gate technology}
Y _{4 5V to 5 5V operation in all modes}
Y _{MICROWIRE compatible serial I O}
Y _{Self-timed programming cycle}
Y _{Device status indication during programming mode}
Y _{15 years data retention}
Y _{Endurance 100 000 read write cycles minimum}
Y _{Packages available 8-pin DIP 8-pin SO}
Block Diagram
TRI-STATE is a registered trademark of National Semiconductor Corporation
MICROWIRETM is a trademark of National Semiconductor Corporation
C1995 National Semiconductor Corporation TL D 11291
TL D 11291 – 1
RRD-B30M65 Printed in U S A