NM93C06LZ Datasheet, PDF (1/12 Pages) National Semiconductor (TI) – 256-/1024-/2048-/4096-Bit Serial EEPROM with Zero Power and Extended Voltage (2.7V to 5.5V)

September 1996
NM93C06LZ C46LZ C56LZ C66LZ
256- 1024- 2048- 4096-Bit Serial EEPROM with Zero
Power and Extended Voltage (2 7V to 5 5V)
(MICROWIRE^TM Bus Interface)
General Description
The NM93C06LZ C46LZ C56LZ C66LZ devices are 256
1024 2048 4096 bits respectively of CMOS non-volatile
electrically erasable memory divided into 16 64 128 256
16-bit registers They are fabricated using National Semi-
conductor’s floating-gate CMOS process for high reliability
and low power consumption These memory devices are
available in both SO and TSSOP packages for small space
considerations
The serial interface that operates these EEPROMs is MI-
CROWIRE compatible for simple interface to standard mi-
crocontrollers and microprocessors There are 7 instruc-
tions that control these devices Read Erase Write Enable
Erase Erase All Write Write All and Erase Write Disable
The ready busy status is available on the DO pin to indicate
the completion of a programming cycle
Features
Y _{Less than 1 0 mA standby current}
Y _{2 7V – 5 5V operation in all modes}
Y _{Typical active current of 100 mA}
Y _{Direct write no erase before program}
Y _{Reliable CMOS floating gate technology}
Y _{MICROWIRE compatible serial I O}
Y _{Self-timed programming cycle}
Y _{Device status indication during programming mode}
Y _{40 years data retention}
Y _{Endurance 10}6 _{data changes}
Y _{Packages available 8-pin SO 8-pin DIP 8-pin TSSOP}
Block Diagram
TRI-STATE is a registered trademark of National Semiconductor Corporation
MICROWIRETM is a trademark of National Semiconductor Corporation
C1996 National Semiconductor Corporation TL D 11778
TL D 11778 – 1
RRD-B30M96 Printed in U S A
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