NDS8963 Datasheet, PDF (1/2 Pages) National Semiconductor (TI) – Dual N-Channel Enhancement Mode Field Effect Transistor

N
September 1996
ADVANCE INFORMATION
NDS8963
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field
effect transistors are produced using National's
proprietary, high cell density, DMOS technology.
This very high density process is especially tailored
to minimize on-state resistance and provide superior
switching performance. These devices are
particularly suited for low voltage applications such
as DC motor control and DC/DC conversion where
fast switching, low in-line power loss, and resistance
to transients are needed.
Features
2.5A, 30V. R_DS(ON) = 0.16Ω @ V_GS = 10V
R_DS(ON) = 0.25Ω @ V_GS = 4.5V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a
widely used surface mount package.
Dual MOSFET in surface mount package.
_______________________________________________________________________________________________
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise note
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case (Note 1)
NDS8963
30
±20
2.5
7.5
2
1.6
1
0.9
-55 to 150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
NDS8963 Rev. A