LPC660 Datasheet, PDF (1/17 Pages) National Semiconductor (TI) – Low Power CMOS Quad Operational Amplifier

March 1998
LPC660
Low Power CMOS Quad Operational Amplifier
General Description
The LPC660 CMOS Quad operational amplifier is ideal for
operation from a single supply. It features a wide range of
operating voltages from +5V to +15V and features rail-to-rail
output swing in addition to an input common-mode range
that includes ground. Performance limitations that have
plagued CMOS amplifiers in the past are not a problem with
this design. Input V_OS, drift, and broadband noise as well as
voltage gain (into 100 kΩ and 5 kΩ) are all equal to or better
than widely accepted bipolar equivalents, while the power
supply requirement is typically less than 1 mW.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LPC662 datasheet for a Dual CMOS operational
amplifier and LPC661 datasheet for a single CMOS opera-
tional amplifier with these same features.
Applications
n High-impedance buffer
n Precision current-to-voltage converter
n Long-term integrator
n High-impedance preamplifier
n Active filter
n Sample-and-Hold circuit
n Peak detector
Features
n Rail-to-rail output swing
n Micropower operation:
n Specified for 100 kΩ and 5 kΩ loads
n High voltage gain:
n Low input offset voltage:
n Low offset voltage drift:
n Ultra low input bias current:
n Input common-mode includes V^−
n Operation range from +5V to +15V
n Low distortion:
n Slew rate:
n Full military temp. range available
(1 mW)
120 dB
3 mV
1.3 µV/˚C
2 fA
0.01% at 1 kHz
0.11 V/µs
Connection Diagram
14-Pin DIP/SO
Top View
DS010547-1
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