LMX2119 Datasheet, PDF (1/6 Pages) National Semiconductor (TI) – 1.9 GHz Power Amplifier

PRELIMINARY
June 1996
LMX2119 1 9 GHz Power Amplifier
General Description
The LMX2119 1 9 GHz Power Amplifier is a monolithic inte-
grated power amplifier suitable for use in the Digital Europe-
an Cordless Telecommunications (DECT) system as well as
other mobile telephony and wireless communications appli-
cations It is fabricated using an advanced Gallium Arsenide
technology that allows single supply (a3V) operation
The LMX2119 consists of two MESFETs cascaded to pro-
vide 24 5 dB of power gain The output power at 3 6V is
a26 5 dBm with an input power level of a2 dBm The input
VSWR of the power amplifier remains constant in the ON
and OFF state
The LMX2119 is available in a 16-pin SOIC surface mount
plastic package
Features
Y _Single a_{3V supply operation}
Y _{Class A bias} l_{30% power added efficiency}
Y _{24 5 dB power gain} a_{26 5 dBm output power}
Y _{50X input output impedance}
Y _{350 mA current consumption at} a_{3 6V}
Applications
Y _{Digital European Cordless Telecommunications (DECT)}
Y _{Portable wireless communications (PCS PCN cordless)}
Y _{Wireless local area networks (WLANs)}
Y _{Other wireless communications systems}
Functional Block Diagram
TL W 12686 – 1
This data sheet contains the design specifications for product development
Specifications may change in any manner without notice
C1996 National Semiconductor Corporation TL W 12686
RRD-B30M27 Printed in U S A
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