LMV2011_14 Datasheet, PDF (1/24 Pages) National Semiconductor (TI) – High Precision, Rail-to-Rail Output Operational Amplifier

LMV2011
www.ti.com
SNOSA32C – AUGUST 2003 – REVISED MARCH 2013
LMV2011 High Precision, Rail-to-Rail Output Operational Amplifier
Check for Samples: LMV2011
FEATURES
1
•2 (For Vs = 5V, Typical Unless Otherwise Noted)
• Low Ensured V_os Over Temperature 35µV
• Low Noise with no 1/f 35nV/√Hz
• High CMRR 130dB
• High PSRR 120dB
• High A_VOL 130dB
• Wide Gain-Bandwidth Product 3MHz
• High Slew Rate 4V/µs
• Low Supply Current 930µA
• Rail-to-Rail Output 30mV
• No External Capacitors Required
APPLICATIONS
• Precision Instrumentation Amplifiers
• Thermocouple Amplifiers
• Strain Gauge Bridge Amplifier
DESCRIPTION
The LMV2011 is a new precision amplifier that offers
unprecedented accuracy and stability at an affordable
price and is offered in a miniature (5-pin SOT-23)
package and in an 8-lead SOIC package. This device
utilizes patented techniques to measure and
continually correct the input offset error voltage. The
result is an amplifier which is ultra stable over time
and temperature. It has excellent CMRR and PSRR
ratings, and does not exhibit the familiar 1/f voltage
and current noise increase that plagues traditional
amplifiers. The combination of the LMV2011
characteristics makes it a good choice for transducer
amplifiers, high gain configurations, ADC buffer
amplifiers, DAC I-V conversion, and any other 2.7V-
5V application requiring precision and long term
stability.
Other useful benefits of the LMV2011 are rail-to-rail
output, a low supply current of 930µA, and wide gain-
bandwidth product of 3MHz. These extremely
versatile features found in the LMV2011 provide high
performance and ease of use.
Connection Diagrams
1
N/C
8 _N/C
V_IN- ²
-
7 _V+
V_IN+ ³
+
6
V_OUT
V^{- 4}
5
N/C
Figure 1. 5-Pin SOT-23 (Top View)
See DBV Package
Figure 2. 8-Pin SOIC (Top View)
See D Package
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
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2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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