LME49990 Datasheet, PDF (1/16 Pages) National Semiconductor (TI) – Ultra-low Distortion, Ultra-low Noise Operational Amplifier

LME49990 Overture^®
E-Series
January 8, 2010
Ultra-low Distortion, Ultra-low Noise Operational Amplifier
General Description
The LME49990 is part of the ultra-low distortion, low noise,
high slew rate operational amplifier series optimized and fully
specified for high performance, high fidelity applications. The
LME49990 combines low voltage noise density (0.9nV/√Hz)
with vanishing low THD+N (0.00001%). The LME49990 has
a high slew rate of ±22V/μs and an output current capability
of ±27mA. It drives 600Ω loads to within 2V of either power
supply voltage.
The LME49990’s outstanding Gain (135dB), CMRR (137dB),
PSRR (144dB), and V_OS (130μV) give the amplifier excellent
operational amplifier DC performance. The LME49990 has a
wide supply range of ±5V to ±18V. The LME49990 is unity
gain stable and is available in an 8-lead narrow body SOIC.
Key Specifications
■ Input Noise Density (f = 1kHz)
■ THD+N
(A_V = 1, V_OUT = 3V_RMS, f_IN = 1kHz)
R_L = 600Ω
■ 1/f Corner Frequency
■ Slew Rate
■ Gain Bandwidth
(A_V = 10⁴, R_L = 2kΩ,
■ PSRR
f = 90kHz)
■ CMRR
■ Power Supply Voltage Range
0.9nV/√Hz (typ)
1.3nV/√Hz (max)
0.00001%
43Hz (typ)
±22V/μs (max)
110MHz (typ)
144dB (typ)
137dB (typ)
±5V to ±18V
Features
■ ^{Easily drives 600Ω load}
■ ^{Output short circuit protection}
Applications
■ ^{Ultra high quality audio signal processing}
■ ^{Active Filters}
■ ^{Preamplifiers}
■ ^{Spectrum analyzers}
■ ^{Ultrasound preamplifiers}
■ ^{Sigma-Delta ADC/DAC buffers}
300597e6
FIGURE 1. Voltage Noise Spectral Density
Overture^® is a registered trademark of National Semiconductor.
© 2010 National Semiconductor Corporation 300597
300597d7
FIGURE 2. THD+N vs Frequency
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