LMC660_06 Datasheet, PDF (1/14 Pages) National Semiconductor (TI) – CMOS Quad Operational Amplifier

June 2006
LMC660
CMOS Quad Operational Amplifier
General Description
The LMC660 CMOS Quad operational amplifier is ideal for
operation from a single supply. It operates from +5V to
+15.5V and features rail-to-rail output swing in addition to an
input common-mode range that includes ground. Perfor-
mance limitations that have plagued CMOS amplifiers in the
past are not a problem with this design. Input V_OS, drift, and
broadband noise as well as voltage gain into realistic loads
(2 kΩ and 600Ω) are all equal to or better than widely
accepted bipolar equivalents.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LMC662 datasheet for a dual CMOS operational
amplifier with these same features.
Features
n Rail-to-rail output swing
n Specified for 2 kΩ and 600Ω loads
n High voltage gain: 126 dB
n Low input offset voltage: 3 mV
n Low offset voltage drift: 1.3 µV/˚C
n Ultra low input bias current: 2 fA
n Input common-mode range includes V^−
n Operating range from +5V to +15.5V supply
n I_SS = 375 µA/amplifier; independent of V⁺
n Low distortion: 0.01% at 10 kHz
n Slew rate: 1.1 V/µs
Applications
n High-impedance buffer or preamplifier
n Precision current-to-voltage converter
n Long-term integrator
n Sample-and-Hold circuit
n Peak detector
n Medical instrumentation
n Industrial controls
n Automotive sensors
Connection Diagram
14-Pin SOIC/MDIP
LMC660 Circuit Topology (Each Amplifier)
00876701
00876704
© 2006 National Semiconductor Corporation DS008767
www.national.com