LMC660_00 Datasheet, PDF (1/12 Pages) National Semiconductor (TI) – CMOS Quad Operational Amplifier

August 2000
LMC660
CMOS Quad Operational Amplifier
General Description
The LMC660 CMOS Quad operational amplifier is ideal for
operation from a single supply. It operates from +5V to +15V
and features rail-to-rail output swing in addition to an input
common-mode range that includes ground. Performance
limitations that have plagued CMOS amplifiers in the past
are not a problem with this design. Input V_OS, drift, and
broadband noise as well as voltage gain into realistic loads
(2 kΩ and 600Ω) are all equal to or better than widely ac-
cepted bipolar equivalents.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LMC662 datasheet for a dual CMOS operational
amplifier with these same features.
Features
n Rail-to-rail output swing
n Specified for 2 kΩ and 600Ω loads
n High voltage gain: 126 dB
n Low input offset voltage: 3 mV
n Low offset voltage drift: 1.3 µV/˚C
n Ultra low input bias current: 2 fA
n Input common-mode range includes V^−
n Operating range from +5V to +15V supply
n I_SS = 375 µA/amplifier; independent of V⁺
n Low distortion: 0.01% at 10 kHz
n Slew rate: 1.1 V/µs
n Available in extended temperature range (−40˚C to
+125˚C); ideal for automotive applications
n Available to Standard Military Drawing specification
Applications
n High-impedance buffer or preamplifier
n Precision current-to-voltage converter
n Long-term integrator
n Sample-and-Hold circuit
n Peak detector
n Medical instrumentation
n Industrial controls
n Automotive sensors
Connection Diagram
14-Pin DIP/SO
LMC660 Circuit Topology (Each Amplifier)
DS008767-1
DS008767-4
© 2000 National Semiconductor Corporation DS008767
www.national.com