LM329_08 Datasheet, PDF (1/8 Pages) National Semiconductor (TI) – Precision Reference

January 17, 2008
LM329
Precision Reference
General Description
The LM329 is a precision multi-current temperature-compen-
sated 6.9V zener reference with dynamic impedance a factor
of 10 to 100 less than discrete diodes. Constructed in a single
silicon chip, the LM329 uses active circuitry to buffer the in-
ternal zener allowing the device to operate over a 0.5 mA to
15 mA range with virtually no change in performance. The
LM329 is available with a temperature coefficients of 0.01%/
°C. This reference also has excellent long term stability and
low noise.
A new subsurface breakdown zener used in the LM329 gives
lower noise and better long-term stability than conventional
IC zeners. Further the zener and temperature compensating
transistor are made by a planar process so they are immune
to problems that plague ordinary zeners. For example, there
is virtually no voltage shift in zener voltage due to temperature
cycling and the device is insensitive to stress on the leads.
The LM329 can be used in place of conventional zeners with
improved performance. The low dynamic impedance simpli-
fies biasing and the wide operating current allows the re-
placement of many zener types.
The LM329 for operation over 0°C to 70°C is available in a
TO-92 epoxy package.
Features
■ ^{0.6 mA to 15 mA operating current}
■ 0.8Ω dynamic impedance at any current
■ ^{Available with temperature coefficient of 0.01%/°C}
■ 7μV wideband noise
■ ^{5% initial tolerance}
■ ^{0.002% long term stability}
■ ^{Low cost}
■ ^{Subsurface zener}
Connection Diagram
Typical Applications
Plastic Package (TO-92)
Simple Reference
571404
Bottom View
Order Number LM329DZ
See NS Package Z03A
571401
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