LM3146 Datasheet, PDF (1/6 Pages) National Semiconductor (TI) – LM3146 High Voltage Transistor Array

February 1995
LM3146 High Voltage Transistor Array
General Description
The LM3146 consists of five high voltage general purpose
silicon NPN transistors on a common monolithic substrate
Two of the transistors are internally connected to form a
differentially-connected pair The transistors are well suited
to a wide variety of applications in low power system in the
dc through VHF range They may be used as discrete tran-
sistors in conventional circuits however in addition they
provide the very significant inherent integrated circuit ad-
vantages of close electrical and thermal matching The
LM3146 is supplied in a 14-lead molded dual-in-line pack-
age for applications requiring only a limited temperature
range
Features
Y _{High voltage matched pairs of transistors VBE matched}
g5 mV input offset current 2 mA max at I_C e 1 mA
Y _{Five general purpose monolithic transistors}
Y _{Operation from dc to 120 MHz}
Y _{Wide operating current range}
Y _{Low noise figure}
3 2 dB typ at 1 kHz
Applications
Y _{General use in all types of signal processing systems}
operating anywhere in the frequency range from dc to
VHF
Y _{Custom designed differential amplifiers}
Y _{Temperature compensated amplifiers}
Connection Diagram
Dual-In-Line and Small Outline Packages
Top View
Order Number LM3146M or LM3146N
See NS Package Number M14A or N14A
TL H 7959 – 1
C1995 National Semiconductor Corporation TL H 7959
RRD-B30M115 Printed in U S A