FDLL456 Datasheet, PDF (1/2 Pages) National Semiconductor (TI) – High Conductance Low Leakage Diode

N
Discrete POWER & Signal
Technologies
1N/FDLL 456/A - 1N/FDLL 459/A
DO-35
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
COLOR BAND MARKING
DEVICE 1ST BAND 2ND BAND
FDLL456
FDLL456A
FDLL457
FDLL457A
FDLL458
FDLL458A
FDLL459
FDLL459A
BROWN
BROWN
RED
RED
RED
RED
RED
RED
WHITE
WHITE
BLACK
BLACK
BROWN
BROWN
RED
RED
High Conductance Low Leakage Diode
Sourced from Process 1M.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
W_IV
Working Inverse Voltage
I_O
IF
if
i_f(surge)
Tstg
TJ
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
456/A
457/A
458/A
459/A
25
60
125
175
200
500
600
1.0
4.0
-65 to +200
175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JA
Thermal Resistance, Junction to Ambient
Max
1N / FDLL 456/A - 459/A
500
3.33
300
Units
V
V
V
V
mA
mA
mA
A
A
°C
°C
Units
mW
mW/°C
°C/W