2N7000 Datasheet, PDF (1/10 Pages) Motorola, Inc – CASE 29-04, STYLE 22 TO-92 (TO-226AA)

March 1993
2N7000 2N7002 NDF7000A NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
These n-channel enhancement mode field effect transistors
are produced using National’s very high cell density third
generation DMOS technology These products have been
designed to minimize on-state resistance provide rugged
and reliable performance and fast switching They can be
used with a minimum of effort in most applications requir-
ing up to 400 mA DC and can deliver pulsed currents up to
2A This product is particularly suited to low voltage low
current applications such as small servo motor controls
power MOSFET gate drivers and other switching applica-
tions
Features
Y _{Efficient high density cell design approaching}
(3 million in²)
Y _{Voltage controlled small signal switch}
Y _Rugged
Y _{High saturation current}
Y _{Low RDS (ON)}
TL G 11378 – 2
TL G 11378–1
TO-92
7000 Series
TO-236 AB
(SOT-23)
7002 Series
TL G 11378 – 3
Absolute Maximum Ratings
Symbol
V_DSS
V_DGR
V_GSS
I_D
P_D
T_J T_STG
T_L
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R_GS ^s 1 MX)
Gate-Source Voltage
Drain Current Continuous
Pulsed
Total Power Dissipation T_A e 25 C
Derating above 25 C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes
from Case for 10 Seconds
2N7000 2N7002
200
115
500
800
400
200
32
16
b55 to 150
NDF7000A NDS7002A
60
60
g40
400
280
2000
1500
625
300
5
24
b65 to 150
300
Units
V
V
V
mA
mA
mW
mW C
C
C
C1995 National Semiconductor Corporation TL G 11378
RRD-B30M115 Printed in U S A