27C16 Datasheet, PDF (1/8 Pages) National Semiconductor (TI) – 16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified

January 1989
27C16
16 384-Bit (2048 x 8) UV Erasable CMOS PROM
Military Qualified
General Description
The 27C16 is a high speed 16K UV erasable and electrically
reprogrammable CMOS EPROM ideally suited for applica-
tions where fast turnaround pattern experimentation and
low power consumption are important requirements
The 27C16 is packaged in a 24-pin dual-in-line package with
transparent lid The transparent lid allows the user to ex-
pose the chip to ultraviolet light to erase the bit pattern A
new pattern can then be written into the device by following
the programming procedure
This EPROM is fabricated with the reliable high volume
time proven P²CMOS^TM silicon gate technology
The 27C16 specified on this data sheet is fully compliant
with MIL-STD-883 Revision C
Features
Y _{Access time down to 450 ns}
Y _{Low CMOS power consumption}
Active Power 26 25 mW max
Standby Power 0 53 mW max (98% savings)
Y _{Performance compatible to NSC800}TM _{CMOS micro-}
processor
Y _{Single 5V power supply}
Y _{Pin compatible to MM2716 and higher density EPROMs}
Y _{Static no clocks required}
Y _{TTL compatible inputs outputs}
Y _{TRI-STATE output}
Y _{Windowed DIP Package}
Y _{Specifications guaranteed over full military temperature}
range (b55 C to a125 C)
Block Diagram
Pin Names
A0 – A10
Addresses
CE
Chip Enable
OE
Output Enable
O₀ – O₇
PGM
Outputs
Program
NC
No Connect
TL D 10329 – 1
TRI-STATE is a registered trademark of National Semiconductor Corporation
NS800TM are P2CMOSTM trademarks of National Semiconductor Corporation
C1995 National Semiconductor Corporation TL D 10329
RRD-B30M105 Printed in U S A