SM5073 Datasheet, PDF (8/14 Pages) Nippon Precision Circuits Inc – VCXO ICs with Built-in Varicap

SM5073 series
SM5073D×S
V_DD = 3.0 to 3.6V, V_C = 1.65V, V_SS = 0V, Ta = –40 to +85°C, unless otherwise noted.
Parameter
HIGH-level output voltage
LOW-level output voltage
Output leakage current
HIGH-level input voltage
LOW-level input voltage
Current consumption
INHN pull-up resistance
Built-in resistance
Built-in capacitance
Symbol
Conditions
Rating
Unit
Min
Typ
Max
V_OH Q: Measurement circuit 1, I_OH = 6mA
2.5
2.75
–
V
V_OL Q: Measurement circuit 1, I_OL = 6mA
–
0.2
0.4
V
I_Z
Q: Measurement circuit 6,
INHN = LOW
V_OH = V_DD
V_OL = V_SS
–
–
10
µA
–
–
10
µA
V_IH INHN
0.7V_DD
–
–
V
V_IL INHN
–
–
0.3V_DD
V
SM5073D1S
–
Measurement circuit 2, load
I_DD
circuit 1, INHN = open,
C_L = 15pF,
SM5073D2S
SM5073D3S
–
–
f = 37MHz
SM5073D4S to 6S –
11
30
mA
9.5
28.5
mA
9
28
mA
8.5
27.5
mA
R_UP Measurement circuit 3
R_f
Design value. A monitor pattern on a wafer is
R_D
tested.
R_B1 Measurement circuit 4
R_B2
Design value. A monitor pattern on a wafer is
tested.
50
100
180
kΩ
150
300
540
kΩ
0.25
0.36
0.47
kΩ
100
200
360
kΩ
50
100
180
kΩ
C_V
Design value. A monitor
V_C = 0.3V
pattern on a wafer is tested. _{VC = 3.0V}
C_G
C_D
Design value. A monitor pattern on a wafer is
tested.
C_C
11.0
14.6
18.2
pF
2.3
4.0
5.7
pF
25.5
30
34.5
pF
25.5
30
34.5
pF
34
40
46
pF
SEIKO NPC CORPORATION —8