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SM5023 Datasheet, PDF (5/9 Pages) Nippon Precision Circuits Inc – Miniature-package Crystal Oscillator Module ICs
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SM5023 series
Electrical Characteristics
3V operation: SM5023BNDH, BNEH, CNDH
VDD = 2.7 to 3.6V, VSS = 0V, Ta = −20 to +80°C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Current consumption
VOH Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA
VOL Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA
VIH INHN
VIL INHN
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 3.3V
VOH = VDD
VOL = VSS
I DD
Measurement cct 3, load cct 1, INHN = open, CL = 15pF,
f = 70MHz
2.1
2.4
–
V
–
0.3
0.5
V
2.0
–
–
V
–
–
0.5
V
–
–
10
µA
–
–
10
µA
–
15
30
mA
INHN pull-up resistance
Built-in capacitance
RUP Measurement cct 4
25
100
250
kΩ
CG
Design value.
A monitor pattern on a wafer is tested.
SM5023BNDH
SM5023BNEH
7.44
8
8.56
pF
CD
Design value.
A monitor pattern on a wafer is tested.
SM5023BNDH
SM5023BNEH
13.95
11.16
15
12
16.05
12.84
pF
pF
5V operation: SM5023BNDH, CNDH
VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Current consumption
VOH Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA
VOL Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA
VIH INHN
VIL INHN
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 5.5V
VOH = VDD
VOL = VSS
IDD1
Measurement cct 3, load cct 1,
INHN = open
IDD2
CL = 15pF
f = 70MHz
CL = 50pF
f = 50MHz
3.9
4.2
–
V
–
0.3
0.5
V
2.0
–
–
V
–
–
0.8
V
–
–
10
µA
–
–
10
µA
–
20
40
mA
–
25
50
mA
INHN pull-up resistance
Built-in capacitance
RUP Measurement cct 4
25
100
250
kΩ
CG
Design value.
A monitor pattern on a wafer is tested.
SM5023BNDH
7.44
8
8.56
pF
CD
Design value.
A monitor pattern on a wafer is tested.
SM5023BNDH
13.95
15
16.05
pF
NIPPON PRECISION CIRCUITS INC.—5
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