SM5022 Datasheet, PDF (5/10 Pages) Nippon Precision Circuits Inc – Crystal Oscillator Module ICs

SM5022 series
Electrical Characteristics
3 V operation: A× series
V_DD = 2.7 to 3.6 V, V_SS = 0 V, Ta = −20 to 80 °C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage
L OW -level output voltage
Output leakage current
HIGH-level input voltage
L OW -level input voltage
Current consumption
V _{O H} Q: Measurement cct 1, V _{D D} = 2.7 V, I_{O H} = 4 m A
V _{O L} Q: Measurement cct 2, V _{D D} = 2.7 V, I_{O L} = 4 m A
Q: Measurement cct 2, V _DD = 3.6 V, INH = L OW , V_{O H} = V _DD
I_Z
Q: Measurement cct 2, V _DD = 3.6 V, INH = L OW , V_OL = V _SS
V_IH INH
V_IL INH
I_{D D}
I N H = open, Measurement cct 3, load cct 1, C_L = 15 p F,
30 MHz crystal oscillator
2.1
2.4
–
V
–
0.3
0.4
V
–
–
10
µA
–
–
10
2.0
–
–
V
–
–
0.5
V
–
4
7
mA
INH pull-up resistance
Feedback resistance
Built-in capacitance
R_UP Measurement cct 4
25
100 250
kΩ
R _f Measurement cct 5
200
600
1000
kΩ
C_G
SM5022A1H, CF5022A1 7.44
8
8.56
pF
Design value, determined by the SM5022A3H, CF5022A3
C _D ^{internal wafer pattern}
SM5022A5H, CF5022A5 _9.3
10
10.7
pF
SM5022A7H, CF5022A7
5 V operation: A× series/ B× series
V_DD = 4.5 to 5.5 V, V_SS = 0 V, Ta = −20 to 80 °C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage V _{O H} Q: Measurement cct 1, V _{D D} = 4.5 V, I_{O H} = 8 m A
3.9
4.2
–
V
L OW -level output voltage
V _{O L} Q: Measurement cct 2, V _{D D} = 4.5 V, I_{O L} = 8 m A
–
0.3
0.4
V
Output leakage current
Q: Measurement cct 2, V _DD = 5.5 V, INH = L OW , V_{O H} = V _DD
I_Z
Q: Measurement cct 2, V _DD = 5.5 V, INH = L OW , V_OL = V _SS
–
–
10
µA
–
–
10
HIGH-level input voltage
V_IH INH
2.0
–
–
V
L OW -level input voltage
V_IL INH
–
–
0.8
V
Current consumption
INH = open, Measurement cct 3,
load cct 1, C_L = 15 p F,
30 MHz crystal oscillator
S M 5 0 2 2 A ×H, CF5022A× –
I_{D D}
INH = open, Measurement cct 3,
load cct 2, C_L = 15 p F,
30 MHz crystal oscillator
S M 5 0 2 2 B ×H, CF5022B× –
7
12
mA
7
12
INH pull-up resistance
Feedback resistance
Built-in capacitance
R_UP Measurement cct 4
25
100 250
kΩ
R _f Measurement cct 5
200
600
1000
kΩ
C_G
SM5022A1H, CF5022A1 7.44
8
8.56
pF
Design value, determined by the
C _D ^{internal wafer pattern}
SM5022A3H, CF5022A3
SM5022A5H, CF5022A5
SM5022A7H, CF5022A7 ^9.3
10
10.7
pF
SM5022B1H, CF5022B1
NIPPON PRECISION CIRCUITS—5