MTP5N35 Datasheet, PDF (3/3 Pages) New Jersey Semi-Conductor Products, Inc. – IRF330-333/IRF730-733 MTM/MTP5N35/5N40 N-Channel Power MOSFETs

MTM/MTP5N35/5N40
Electrical Characteristics (Tc •=• 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
Off Characteristics
V(BH)DSS ^{Drain Source Breakdown Voltage1}
MTM/MTP5N40
400
MTM/MTP5N35
350
loss
Zero Gate Voltage Drain Current
0.25
2.5
'ass
Gate-Body Leakage Current
On Characteristics
Vos(tn) ^{Gate Threshold Voltage}
±500
2.0
4.5
1.5
4.0
RDS(on)
Vos(on)
Static Drain-Source On-Resistance2
Drain-Source On-Voltage2
9ls
Forward Transconductance
2.0
Dynamic Characteristics
Ciss
Input Capacitance
GOSS
Output Capacitance
cres
Reverse Transfer Capacitance
Switching Characteristics (Tc = 25°C, Figures 12, 13)3
td(on)
V
Turn-On Delay Time
Rise Time
td(o«)
tf
Turn-Off Delay Time
Fall Time
Qg
Total Gate Charge
1.0
2.5
6.2
5.0
1200
300
80
50
100
200
100
30
HotM
1. Tj-+25°C to +150'C
2. Pulse test: Pulsa width <60 (is. Duty cycle < 1%
3. Switching time measurements performed on LEM TR-58 test equipment.
Unit
Test Conditions
V
VQS - 0 V, b - 5.0 mA
mA
VDS = 0.85 x Rated VDSs,
VGS - o v
rtiA
VDS = 0.85 x Rated VDss.
VQS-O v, Tc=ioo°c
nA
Vss = ±20 V, VDS-O V
V
V
Q.
V
V
V
S (U)
ID -1.0 mA, VDS = VQS
ID = 1.0 mA, VDS = VGS
TC-100°C
VGS = 10 V, ID -2.5 A
VQS -10 V; ID -2.5 A
VGS -10 V, ID -5.0 A
VGS -10 V, ID = 2.5 A
TC = 100°C
V0s=10 V, ID = 2.5 A
PF
VDS - 25 V, VQS = 0 V
( = 1.0 MHz
PF
PF
ns
VDD = 25 V, ID = 2.5 A
ns
VGS =10 V, RQEN = 50 n
RGS = 50 n
ns
ns
nC
VGS =10 V, ID = 7.0 A
VDD -180 V