MTP12N18 Datasheet, PDF (3/3 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Power MOSFETs, 12 A, 150-200 V

IRF230-233/IRF630-633
MTP12N18/12N20
Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted)
Symbol
Characteristic
Mln
Max
Unit
On Characteristics
VQSIUI)
Gate Threshold Voltage
IRF230/233/630/633
V
2.0
4.0
MTP12N18/12N20
2.0
RDS(on) ^{Static Drain-Source On-Resistance2}
4.5
n
IRF230/231/630/631
0.40
IRF232/233/632/633
0.50
MTP12N18/12N20
0.35
Vos(on)
Drain-Source On-Voltage2
MTP12N18/12N20
2.1
V
5.0
V
4.2
V
Sfs
Forward Transconductance
3.0
Dynamic Characteristics
Qss
Input Capacitance
C05S
Output Capacitance
ct8S
Reverse Transfer Capacitance
Switching Characteristics (Tc = 25°C, Figures 1, 2)1
t«on)
tr
Turn-On Delay Time
Rise Time
tdfrff)
t|
Turn-Off Delay Time
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
td(ofl)
Turn-Off Delay Time
t(
Fall Time
QB
Total Gate Charge
S (U)
800
PF
450
PF
150
PF
30
ns
50
ns
50
ns
40
ns
50
ns
250
ns
100
ns
120
ns
30
nC
Test Conditions
|p - 250 jjA, VDS = Ves
ID - 1 mA, VDS = VGS
VQS = 10 V, ID -5.0 A
ID -6.0 A
VGS -10 V; ID = 6.0 A
VQS -10 V; ID -12.0 A;
VGS -10 V; b = 6.0 A
TC = 100°C
VDS -10 V, ID = 5.0 A
VDS = 25 V, VQS = 0 V
f-1.0 MHz
VDD - 90 V, 1D - 5.0 A
VGS = 10 V, RGEN"=15 SI
RGs = i5 n
VDD = 25 V, b = 6,0 A
VGS -10 v, RGEN-SO fl
RGS - 50 n
VQS -10 V, ID =12 A
VDD -120 V