VN34AK Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – HELD EFFECT POWER TRANSISTOR

electrical Characteristics (TA = 25° C) (unless otherwise specified)
CHARACTERISTIC
SYMBOL MIN
TYP
off characteristics
Drain-Source Breakdown Voltage
(VGS = 0V, In = 10 //A)
VN35AK
BVDSS
35
VN66/67AK
60
—
VN98/99AK
90
Zero Gate Voltage Drain Current
(VDS = Max Rating, VGS = 0V)
(VDS = Max Rating, x 0.8, VQS = 0V, TA = 125°C)
loss
—
—
Gate-Source Leakage Current
(VGS=15V,VDS = OV)
(vGs = 15V, VDS = ov - TA = 125 °C)
IGSS
—
„,..
on characteristics"
Gate Threshold Voltage
(VDS = VGS, ID = 1 mA)
Drain-Source Saturation Voltage
(VGS = 10V, ID = 1.0A)
Drain-Source Saturation Voltage
(VQs = 10V, ID = 1.0A)
On-State Drain Current
(VDS = 25V. VGS = 10V)
Forward Transconductance
(VDS = 24V, ID = 0.5A)
VGS(TH)
0.8
—
VN66AK _VDS(ON)
VN98AK
__
—
VN35AK _VDS(ON)
_
VN67AK
VN99AK
'D(ON)
1.0
—E
9fs
,170
—
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
VQS = OV
VDS = 24V
f=1 MHz
Ciss
—
—
coss
—
—
Crss
•—
—
switching characteristics*
Turn-on Delay Time
Turn-off Delay Time
See switching times
ld(on)
—
3
waveform below
td(off)
—
3
•Pulse Test: Pulse width < 300 us. duty cycle < 2%
MAX
UNIT
^~
Volts
10
M
500
100
nA
500
nA
2.0
Volts
3.0
Volts
4.0
2.5
Volts
3.5
4.5
—
Amps
„
mhos
50
PF
40
PF
10
pF
8
ns
8
ns
INPUT
OUTPUT
90%
SWITCHING TIME TEST WAVEFORMS