TIP36 Datasheet, PDF (2/2 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

TIP36, TIP36A, TIP36B, TIP36C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
WIN TYP MAX
TIP36
-40
Collector-emitter
(BR)CEO breakdown V0|tage
'<== -3°mA
(see Note 5)
|B = °
TIP36A
-60
TIP36B .
T|p36c
-80
-100
VCE = -80V
VBE = 0
TIP36
-0.7
Collector-emitter
VCE = -100V
VBE = 0
TIP36A
-0.7
CES cut-off current
VCE = -120V
VBE = 0
TIP36B
-0.7
VCE = -140 V
VBE = 0
TIP36C
-0.7
Collector cut-off
VCE= -30V
IB = 0
TIP36/36A
-1
CEO current
VCE= -60V
IB = 0 '
TIP36B/36C
-1
Emitter cut-off
VEB = -5 V
lc = 0
-1
'EBO current
Forward current
VrF = -4V
IC = -1.5A
25
hFE
Oh
°
(see Notes 5 and 6)
transfer ratio
VCE = -4V
IC=-15A
10
50
Collector-emitter
'B= "1'5A
lc=-15A
(see Notes 5 and 6)
-1.8
CE(5at> saturation voltage
IB= -5A
lc= -25 A
V
'
-4
Base-emitter
BE voltage
£: - I:::;::
».«..-«
-2
-4
Small signal forward
hfp
VCE = -10V
l c = -1 A
f = 1 kHz
25
current transfer ratio
Small signal forward
VCE= -10V
lc= -1 A
f = 1 MHz
3
current transfer ratio
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 us, duty cycle < 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
R8JC
ReJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1 °c/w
35.7 °c/w
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS f
MIN TYP MAX UNIT
ton
Turn-on time
IC = -15A
lB(on) = -1.5A
lB(off)=1.5A
1.1
us
toff Turn-off time
VBE(off) - 4. 1 5 V
RL - 2 n
tp - 20 us, dc<2%
0.8
US
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.