TIP35 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,40-100V,125W)

TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
WIN TYP MAX
TIP35
40
Collector-emitter
TIP35A
60
(BR)CEO breakdown V0|tage
' c = 30 mA
IB = 0
T|p35B
80
(see Note 5)
J|p35c
100
VCE = 80 V
VBE = 0
TIP35
0.7
Collector-emitter
VCE = 100V
VBE = 0
TIP35A
0.7
CES cut-off current
VCE=120V
VBE = 0 ,
TIP35B
0.7
VCE = 140 V
VBE = 0
TIP35C
0.7
Collector cut-off
VCE= 30V
IB = 0
TIP35/35A
1
'CEO
current
VCE= 60V
IB = 0
TIP35B/35C
1
Emitter cut-off
VEB= 5V
|c = 0
1
'EBO
nFE
current
Forward current
transfer ratio
s: ::
;::":
(seeNotes5and6)
25
10
50
Collector-emitter
'sa ' saturation voltage
!;: 1"
I*:*:
(«•****««»
1.8
4
Base-emitter
2
VRC
voltage
VcE= 4V
!c=25A
(see Notes 5 and 6,
4
Small signal forward
h*e
VCE= 10V
lc= 1A
f = 1 kHz
25
current transfer ratio
Small signal forward
hfp
VCE= 10V
lc= 1A
f = 1 MHz
3
current transfer ratio
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 us, duty cycle < 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
R6JC
RejA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1 °c/w
35.7 °c/w
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
ton
Turn-on time
toff
Turn-off time
IC = 15A
VBE(off) = -4.15V
TEST CONDITIONS t
lB(on)=1.5A
RL = 2n
lB(off) = -1.5A
tp = 20us, dc < 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1.2
MS
0.9
MS