TIP33 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,40-100V,80W)

TJP33, TIP33A, T1P33B, TIP33C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
(BR)CEO breakdown voltage
Collector-emitlor
CES cut-off current
'ceo
'EBO
FE
VCE(..t)
Collector cut-off
current
Emitter cut-off
current
Forward currant
transfer ratio
Collector-emitter
MluraUonvq|laoe
Base-emitter
8E voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
lc- 30mA
(see Note 6}
VCE = 80 V
VCE » 100V
VCE -120V
y a: 1 40 V
VCE a 30^
VCE- 60V
VEB» sv
Vfp = 4 V
1. 1 MA
VCE, 10V
VCE = 10 V
TEST CONDITIONS
TIP33
la.O
VBE = 0
VBE = O
VBE-O
Vtap " 0
'B-°
IB = 0
ic-o
'TIKSSB
TIP33C
TIP33
TIP33A
TIP33B
TIP33C
TIP33/33A
TIP33B/33C
MIN TYP MAX
40
60
80
100
0.4
0.4
0.4
0.4
0.7
0.7
1
Ir ™ 1 A
40
(see Notes 5 and 6)
20
100
1
!c-IOA
«-»!««« 8)
4
1.6
c
(see Notes S and 6)
3
IC = 0.5A
f.lhHz
20
I0 = 0.5 A
f - 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques. lp - 300 us. duty cycle s 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
ROJC
H^jA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.SA
"C/W
35.7 •c/w
reslstlve-load-switching characteristics at 25°C case temperature
PARAMETER
ton Turn-On lima
ton Tum-oH timo
IC-SA
vBEio(t) - -* V
TEST CONDITIONS *
i8(m) = o.eA
i^,,,. -o.e A
RL - 5 £1
tn « 20 us, dc S 2%
Voltage and current value* shown are nominal; exact values vary slightly with transistor parameter*.
MIN TYP MAX UNIT
0.6
|»
1
MS