TIP32 Datasheet, PDF (2/2 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to- Case
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 2)
(lc = 30 mAdc, IB = 0)
TIP31 , TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
TIP31, TIP32, TIP31A, TIP32A
(VCE = 60 Vdc, IB = 0)
TIP31 B, TIP31C, TIP32B, TIP32C
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
(VCE = 60 Vdc, VEB = 0)
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
TIP31, TIP32
TIP31A, TIP32A
TIP31 B, TIP32B
TIP31C, TIP32C
Emitter Cutoff Current (VBE = 5.0 Vdc, IQ = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain (lc = 1 .0 Adc, VCE = 4.0 Vdc)
(lc = 3.0 Adc, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage (lc = 3.0 Adc, IB = 375 mAdc)
Base-Emitter On Voltage (lc = 3.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (lc = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
Small-Signal Current Gain (lc = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
2. Pulse Test: Pulse Width s 300 us, Duty Cycle < 2.0%.
Symbol
RBJA
RBJC
Symbol
vCEO(sus)
ICEO
!CES
'EBO
HFE
VCE(sat)
VBE(on)
fT
hfe
Max
62.5
3.125
Unit
°C/W
°c/w
Min
Max
Unit
40
Vdc
60
-
80
100
~
0.3 mAdc
0.3
nAdc
200
200
-
200
200
-
1.0 mAdc
25
-
10
50
-
1.2
Vdc
-
1.8
Vdc
3.0
-
MHz
20
-
-